Allicdata Part #: | 1N5060CSTR-ND |
Manufacturer Part#: |
1N5060 TR |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE GEN PURP 400V 1A GPR-1A |
More Detail: | Diode Standard 400V 1A Through Hole GPR-1A |
DataSheet: | 1N5060 TR Datasheet/PDF |
Quantity: | 1000 |
4500 +: | $ 0.44453 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | SOD-88A, Axial |
Supplier Device Package: | GPR-1A |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The 1N5060TR is a type of diode, more specifically a rectifying diode, which is made out of silicon and mounted on a TO-220 package. This diode has a wide variety of applications and due to its low cost and enhanced characteristics, it makes it suitable for a variety of power supply applications, including rectification and power switching.
Applications
The 1N5060TR is often used in high current load switches, voltage voltage-reference, and current-limiting circuits. It can also be used as a freewheeling diode in forward converters and flyback converters, as a rectifying diode in DC/DC converters, and in power supplies for white goods and consumer electronic products, among many other applications. Additionally, this diode can also be used for snubber applications, rectification of high-frequency signals, and pulse-width modulation (PWM) circuits.
Features and Benefits
Some of the features and benefits of the 1N5060TR diode include its high surge capability, low forward voltage, fast reverse recovery time, wide voltage range (from 30V to 600V), and low thermal resistance (1.45 °C/W at 25 °C). The 1N5060TR also has a low junction capacitance, which makes it suitable for high frequency applications, and a high temperature capability (up to 150 °C). In addition, this diode is also easily mounting and has a wide option of packages available, which makes it ideal for different projects and applications.
Working Principle
The 1N5060TR diode works as a one-way current valve, allowing current to flow in only one direction and blocking current in the opposite direction. The rectifying characteristics of the diode depend on the PN junction and the barrier built by its depletion layer. When negative charge is applied to the PN junction, the junction becomes reverse-biased and the barrier prevents current from flowing. On the other hand, when positive charges are applied to the PN junction, a forward-bias is built and current can flow through it.
Conclusion
The 1N5060TR diode is an excellent choice for many different applications, from power switching to voltage reference circuits. It provides excellent characteristics, such as high surge capability, low forward voltage, fast reverse recovery time, wide voltage range, and low thermal resistance, making it suitable for different projects and applications. Additionally, since it is a rectifying diode, its working principle is based on the PN junction present in it and its ability to create a barrier that allows current to flow in only one direction.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5060TR | Vishay Semic... | -- | 25000 | DIODE AVALANCHE 400V 2A S... |
1N5059TR | Vishay Semic... | 0.12 $ | 15000 | DIODE AVALANCHE 200V 2A S... |
1N5061TR | Vishay Semic... | 0.13 $ | 30000 | DIODE AVALANCHE 600V 2A S... |
1N5062TAP | Vishay Semic... | 0.13 $ | 20000 | DIODE AVALANCHE 800V 2A S... |
1N5059GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5060 TR | Central Semi... | 0.49 $ | 1000 | DIODE GEN PURP 400V 1A GP... |
1N5061 TR | Central Semi... | 0.49 $ | 1000 | DIODE GEN PURP 600V 1A GP... |
1N5061GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5062GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5060GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5062TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 800V 2A S... |
1N5060GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5062GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5059GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5060GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5061GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5062GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5060GP-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5062GP-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5059TAP | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 200V 2A S... |
1N5060TAP | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 400V 2A S... |
1N5061TAP | Vishay Semic... | 0.12 $ | 1000 | DIODE AVALANCHE 600V 2A S... |
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