Allicdata Part #: | 1N5060TAP-ND |
Manufacturer Part#: |
1N5060TAP |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 400V 2A SOD57 |
More Detail: | Diode Avalanche 400V 2A Through Hole SOD-57 |
DataSheet: | 1N5060TAP Datasheet/PDF |
Quantity: | 1000 |
25000 +: | $ 0.09702 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 2.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 400V |
Capacitance @ Vr, F: | 40pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | SOD-57, Axial |
Supplier Device Package: | SOD-57 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The 1N5060TAP is a silicon epitaxial-base PN junction diode.
It is typically used in general-purpose rectification applications in power supplies up to 1 Amp. It is also is useful in voltage clamping, light sensing and other low-level, low-voltage semiconductor circuits. The 1N5060TAP is a three-terminal device that requires only a VCC power supply, a ground connection, and a signal to operate.
The primary application field of 1N5060TAP is general purpose rectification applications. It is a PN junction diode and its working principle is based on the junction of two different types of semiconductor materials. The P-type material has an excess of positive holes, and the N-type material has an excess of electrons. When a reverse bias is applied, the depletion layer increases. This improves the ability of the diode to block reverse current and rectify only the forward current. The forward voltage drop across the diode limits the forward current. The 1N5060TAP has a maximum forward voltage of .6 volts (V) and a maximum forward current of 1 ampere (A).
The device can also be used in voltage clamping applications. It can be used as a Zener diode to limit the voltage across a particular node in the circuit. It can also be used with a capacitor to create a voltage regulator. In such a configuration, the diode will regulate the output voltage by allowing or blocking the charging current dependent on the capacitor voltage.
The device can also be used in light-sensing applications where it acts as a photodiode. In such a configuration, the diode will allow current to flow in presence of light. The current flow through the device is dependent on the intensity of the applied light. The device can also be used with a transistor to amplify the output current in light-sensing applications.
The 1N5060TAP is a versatile PN junction diode for general-purpose rectification, voltage-clamping and light-sensing applications. It is a low-power, low-voltage device requiring only a VCC, ground connection, and a signal to operate. The device provides reliable rectification and sensitivity to light over a wide range of temperatures and its low voltage drop allows efficient operation in power supplies up to 1 Ampere.
The specific data is subject to PDF, and the above content is for reference
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1N5060GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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