1N5060TAP Allicdata Electronics
Allicdata Part #:

1N5060TAP-ND

Manufacturer Part#:

1N5060TAP

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE AVALANCHE 400V 2A SOD57
More Detail: Diode Avalanche 400V 2A Through Hole SOD-57
DataSheet: 1N5060TAP datasheet1N5060TAP Datasheet/PDF
Quantity: 1000
25000 +: $ 0.09702
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N5060TAP is a silicon epitaxial-base PN junction diode.

It is typically used in general-purpose rectification applications in power supplies up to 1 Amp. It is also is useful in voltage clamping, light sensing and other low-level, low-voltage semiconductor circuits. The 1N5060TAP is a three-terminal device that requires only a VCC power supply, a ground connection, and a signal to operate.

The primary application field of 1N5060TAP is general purpose rectification applications. It is a PN junction diode and its working principle is based on the junction of two different types of semiconductor materials. The P-type material has an excess of positive holes, and the N-type material has an excess of electrons. When a reverse bias is applied, the depletion layer increases. This improves the ability of the diode to block reverse current and rectify only the forward current. The forward voltage drop across the diode limits the forward current. The 1N5060TAP has a maximum forward voltage of .6 volts (V) and a maximum forward current of 1 ampere (A).

The device can also be used in voltage clamping applications. It can be used as a Zener diode to limit the voltage across a particular node in the circuit. It can also be used with a capacitor to create a voltage regulator. In such a configuration, the diode will regulate the output voltage by allowing or blocking the charging current dependent on the capacitor voltage.

The device can also be used in light-sensing applications where it acts as a photodiode. In such a configuration, the diode will allow current to flow in presence of light. The current flow through the device is dependent on the intensity of the applied light. The device can also be used with a transistor to amplify the output current in light-sensing applications.

The 1N5060TAP is a versatile PN junction diode for general-purpose rectification, voltage-clamping and light-sensing applications. It is a low-power, low-voltage device requiring only a VCC, ground connection, and a signal to operate. The device provides reliable rectification and sensitivity to light over a wide range of temperatures and its low voltage drop allows efficient operation in power supplies up to 1 Ampere.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "1N50" Included word is 22
Part Number Manufacturer Price Quantity Description
1N5060TR Vishay Semic... -- 25000 DIODE AVALANCHE 400V 2A S...
1N5059TR Vishay Semic... 0.12 $ 15000 DIODE AVALANCHE 200V 2A S...
1N5061TR Vishay Semic... 0.13 $ 30000 DIODE AVALANCHE 600V 2A S...
1N5062TAP Vishay Semic... 0.13 $ 20000 DIODE AVALANCHE 800V 2A S...
1N5059GP-E3/54 Vishay Semic... -- 1000 DIODE GEN PURP 200V 1A DO...
1N5060 TR Central Semi... 0.49 $ 1000 DIODE GEN PURP 400V 1A GP...
1N5061 TR Central Semi... 0.49 $ 1000 DIODE GEN PURP 600V 1A GP...
1N5061GP-E3/54 Vishay Semic... -- 1000 DIODE GEN PURP 600V 1A DO...
1N5062GP-E3/54 Vishay Semic... -- 1000 DIODE GEN PURP 800V 1A DO...
1N5060GP-E3/54 Vishay Semic... 0.08 $ 1000 DIODE GEN PURP 400V 1A DO...
1N5062TR Vishay Semic... 0.13 $ 1000 DIODE AVALANCHE 800V 2A S...
1N5060GPHE3/73 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 1A DO...
1N5062GPHE3/73 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 800V 1A DO...
1N5059GPHE3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 1A DO...
1N5060GPHE3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 1A DO...
1N5061GPHE3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 1A DO...
1N5062GPHE3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 800V 1A DO...
1N5060GP-E3/73 Vishay Semic... -- 1000 DIODE GEN PURP 400V 1A DO...
1N5062GP-E3/73 Vishay Semic... -- 1000 DIODE GEN PURP 800V 1A DO...
1N5059TAP Vishay Semic... 0.11 $ 1000 DIODE AVALANCHE 200V 2A S...
1N5060TAP Vishay Semic... 0.11 $ 1000 DIODE AVALANCHE 400V 2A S...
1N5061TAP Vishay Semic... 0.12 $ 1000 DIODE AVALANCHE 600V 2A S...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics