Allicdata Part #: | 1N5061TR-ND |
Manufacturer Part#: |
1N5061TR |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 600V 2A SOD57 |
More Detail: | Diode Avalanche 600V 2A Through Hole SOD-57 |
DataSheet: | 1N5061TR Datasheet/PDF |
Quantity: | 30000 |
5000 +: | $ 0.11510 |
10000 +: | $ 0.10716 |
25000 +: | $ 0.10584 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 2.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4µs |
Current - Reverse Leakage @ Vr: | 1µA @ 600V |
Capacitance @ Vr, F: | 40pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | SOD-57, Axial |
Supplier Device Package: | SOD-57 |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | 1N5061 |
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1N5061TR are diodes that are used in rectification applications. These diodes are used in applications when a large amount of power needs to be converted from an AC source to a DC source.
The 1N5061TR can be found in applications such as power supplies, DC to AC inverters, and radiofrequency (RF) systems. In these applications, the 1N5061TR is designed to convert AC voltage to a lower DC voltage or to connect two signal paths in a system.
The 1N5061TR operates on a principle known as the PN junction. This principle uses a semiconductor material, usually based on silicon, to create rectification. When a positive and negative electrode are combined, an electrical junction is created.
The positive electrode, called the anode, is connected to the positive voltage source, while the negative electrode, called the cathode, is connected to the negative voltage source. A PN junction is created when an n-type semiconductor material is combined with a p-type semiconductor material. The n-type material has an abundance of negative charge carriers, while the p-type material has an abundance of positive charge carriers.
When a voltage is applied to the 1N5061TR, the difference in polarity between the anode and the cathode creates a barrier that electrons can\'t pass through. This causes them to travel in one direction, creating a rectified output. This output can be used for applications that require a DC voltage to operate.
The 1N5061TR is also available in a Hermetically-Sealed package, which ensures that it is kept safe from contaminants. The hermetically-sealed package also provides superior insulation, making it well-suited for automotive and other applications that need to run in harsh environments.
The 1N5061TR is a versatile diode that can be used in rectification applications. Its ease of use and its resistance to contaminants make it an ideal choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5060TR | Vishay Semic... | -- | 25000 | DIODE AVALANCHE 400V 2A S... |
1N5059TR | Vishay Semic... | 0.12 $ | 15000 | DIODE AVALANCHE 200V 2A S... |
1N5061TR | Vishay Semic... | 0.13 $ | 30000 | DIODE AVALANCHE 600V 2A S... |
1N5062TAP | Vishay Semic... | 0.13 $ | 20000 | DIODE AVALANCHE 800V 2A S... |
1N5059GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5060 TR | Central Semi... | 0.49 $ | 1000 | DIODE GEN PURP 400V 1A GP... |
1N5061 TR | Central Semi... | 0.49 $ | 1000 | DIODE GEN PURP 600V 1A GP... |
1N5061GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5062GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5060GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5062TR | Vishay Semic... | 0.13 $ | 1000 | DIODE AVALANCHE 800V 2A S... |
1N5060GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5062GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5059GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5060GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5061GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5062GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5060GP-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N5062GP-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5059TAP | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 200V 2A S... |
1N5060TAP | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 400V 2A S... |
1N5061TAP | Vishay Semic... | 0.12 $ | 1000 | DIODE AVALANCHE 600V 2A S... |
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