Allicdata Part #: | 1N5181-ND |
Manufacturer Part#: |
1N5181 |
Price: | $ 27.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 4KV 100MA AXIAL |
More Detail: | Diode Standard 4000V 100mA Through Hole S, Axial |
DataSheet: | 1N5181 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 25.16350 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 4000V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 10V @ 100mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 5µA @ 4000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | S, Axial |
Supplier Device Package: | S, Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
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A 1N5181 is a silicon power rectifier and is part of the 1N5180-1N5188 series from Vishay. These products are designed for use in applications requiring high surge capability, high blocking voltage and low forward voltage drop. The diodes feature a planar passivated construction for increased reliability in the demanding environments found in industrial and automotive applications. The 1N5181 rectifier is designed for general purpose, AC and DC power supplies, SMPS and rectification circuits.
The 1N5181 is a single-phase, full-wave rectifier fabricated with planar passivated chip technology in a TO-220AB package. It can be used in AC/DC step-up and step-down, LED lighting and other power conversion circuits. The power handling capability of the 1N5181 can reach up to 200 V and 5A. The maximum peak repetitive reverse voltage of this diode is 200 V, with a junction temperature range of -65°C to +175°C. The maximum forward voltage drop is 0.7V at 0.5A.
The 1N5181 operates on the principle of rectification which occurs when a diode passes current in one direction and blocks current flowing in the opposite direction. This process is carried out using p-n junctions, which form the basis for the operation of all diodes. A p-n junction diode can be formed by joining together a p-type semiconductor material with an n-type semiconductor material. The junction then absorbs electrons from the n-type material and donates it to the p-type material. This causes an electric field to appear in the junction. The polarity of the electric field determines the direction of current flow through the diode. In the case of the 1N5181, this electric field helps rectify AC current into DC current.
The 1N5181 is primarily used in AC/DC power supplies, lighting and other power conversion equipment, motor drives, telecommunication applications, battery-powered systems, rectification circuits and automotive applications. It can be used as a power rectifier to provide over-voltage protection and can be used to convert AC to DC power.
The 1N5181 is perfect for applications that require high surge capabilities and low forward voltage drops in a single component. It is a reliable, cost-effective and versatile power rectifier for industrial and automotive applications. With its advanced planar passivated construction, it offers excellent EMI/RFI noise immunity and high blocking voltage capabilities.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N5186 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 100V 3A AX... |
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