1N5195UR

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Introduction of 1N5195UR

1N5195UR is a rectifier diode, which belongs to Diodes - Rectifiers - Single. It is a high-voltage switching power semiconductor field effect transistor (MOSFET) that can be used in wide range of applications, from low-level switching to high-power control. 1N5195UR is based on advanced trench technology and is characterized by extremely low on-resistance and good switching speed. Its maximum junction temperature is 175°C and it features a fast recovery time and a high current capability.

Application Field of 1N5195UR

1N5195UR can be used in a variety of applications that require a high-voltage switching power semiconductor, such as high-efficiency power converters and ultra-low power diodes. It is also often used in switch mode power supplies, motor controllers, AC line rectifiers, linear power supplies, and DC-DC converters. Additionally, 1N5195UR can also be used for automotive switching applications, such as LED lighting, LED dimmers, LED lighting control circuits, and HID headlights.

Working Principle of 1N5195UR

1N5195UR is a MOSFET (Metal Oxide Semi-conductor FET) diode that works on the principle of a series connected bipolar junction transistor (BJT). In this type of device, a source current is applied to the gates of two transistors simultaneously, so that when current is passed through the MOSFET, the gate-source voltage controls the voltage dropped across the drain and source of each transistor. This enables the device to control the voltage level of the output signal and to reduce power consumption. The device features an on-board charge pump, which helps to reduce distortion and protect the devices from high-voltage spikes and overvoltage surges.

The device has an additional feature called “soft start” which is an added feature to reduce total system power consumption. This feature helps to reduce power consumption by slowly ramping up the drain-source voltage, thereby avoiding sudden voltage drop across the internal MOSFET. This also helps to reduce EMI (electromagnetic interference) and noise. It also helps to reduce thermal stress on the internal components.

1N5195UR can be operated in both IP (on/off) mode and voltage mode. In IP mode, the device continuously performs PWM (pulse width modulation) cycles, where the duty cycle of the PWM is proportional to the input voltage level. In voltage mode, the device operates in a constant voltage state.

The device also features protection in times of overvoltage or overcurrent conditions. Under overvoltage conditions, the device automatically reduces the voltage to the safe level by switching off the internal switching FET, thereby protecting the ICs from damage. Under overcurrent conditions, the device automatically reduces the current by switching off the internal switching FET, thereby protecting the ICs from damage.

Conclusion of 1N5195UR

1N5195UR is a rectifier diode, which belongs to Diodes - Rectifiers - Single. It can be used in a variety of applications that require a high-voltage switching power semiconductor and is based on advanced trench technology and is characterized by extremely low on-resistance and good switching speed. Its working principle is based on a series connected bipolar junction transistor (BJT) and it features an on-board charge pump, a fast recovery time, a high current capability and protection features against overvoltage and overcurrent conditions.

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