Allicdata Part #: | 1N5184-ND |
Manufacturer Part#: |
1N5184 |
Price: | $ 27.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 10KV 100MA SAXIAL |
More Detail: | Diode Standard 10000V 100mA Through Hole S, Axial |
DataSheet: | 1N5184 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 25.15360 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 10000V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 10V @ 100mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 5µA @ 10000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | S, Axial |
Supplier Device Package: | S, Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
1N5184 is a single discrete rectifier diode, typically used in DC systems voltage rectification applications. It is a fast manual recovery device and is used in applications such as rectification, general-purpose switching and signal mixing. It has a low forward voltage drop and a low leakage current, and requires minimal board space. This device is both reliable and cost effective.
Application Field
The 1N5184 is commonly used for DC systems rectification. It is used in applications such as solar electric system power generation, automobile power supplies, DC motor drives and even small-signal switching. It has many advantages, such as fast switching, low forward voltage drop and a low leakage current, which make it suitable for a wide range of applications. Its small size and low cost also make it ideal for most applications.
Working Principle
The 1N5184 operates on a principle of rectification. It is a P/N device, where a P-type layer of material is sandwiched between a N-type layer of material. When forward-biased (positive voltage applied to P layer and negative voltage applied to N layer), it acts as a closed gate, allowing the current to flow through. Similarly, when reverse-biased (negative voltage applied to P layer and positive voltage applied to N layer), it acts as an open gate and does not allow any current to pass through.
The 1N5184 has the added advantage of a low forward voltage drop and low leakage current, making it suitable for applications where efficiency is a key factor. It also has a fast response time and long life. The 1N5184 is also quite small and takes up minimal space on a PCB.
Conclusion
The 1N5184 is a single discrete rectifier diode, typically used for DC systems voltage rectification applications. It has characteristics such as a low forward voltage drop and low leakage current, making it ideal for efficient applications. It also has a fast response time and long life. In addition, the 1N5184 has the added benefit of taking up minimal board space, saving precious space on a PCB.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5186 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 100V 3A AX... |
1N5187 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 200V 3A AX... |
1N5189 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 500V 3A AX... |
1N5190 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 600V 3A AX... |
1N5194 | Microsemi Co... | 5.87 $ | 1000 | DIODE GEN PURP 70V 200MA ... |
1N5195 | Microsemi Co... | 5.87 $ | 1000 | DIODE GEN PURP 180V 200MA... |
1N5196 | Microsemi Co... | 5.87 $ | 1000 | DIODE GEN PURP 225V 200MA... |
1N5194UR | Microsemi Co... | 6.52 $ | 1000 | DIODE GEN PURP 70V 200MA ... |
1N5195UR | Microsemi Co... | 6.52 $ | 1000 | DIODE GEN PURP 180V 200MA... |
1N5196UR | Microsemi Co... | 6.52 $ | 1000 | DIODE GEN PURP 225V 200MA... |
1N5186US | Microsemi Co... | 6.66 $ | 1000 | DIODE GEN PURP 100V 3A AX... |
1N5187US | Microsemi Co... | 6.66 $ | 1000 | DIODE GEN PURP 200V 3A AX... |
1N5188US | Microsemi Co... | 6.66 $ | 1000 | DIODE GEN PURP 400V 3A AX... |
1N5189US | Microsemi Co... | 6.66 $ | 1000 | DIODE GEN PURP 500V 3A D5... |
1N5183 | Microsemi Co... | 27.96 $ | 1000 | DIODE GEN PURP 7.5KV 100M... |
1N5181 | Microsemi Co... | 27.96 $ | 1000 | DIODE GEN PURP 4KV 100MA ... |
1N5182 | Microsemi Co... | 27.96 $ | 1000 | DIODE GEN PURP 5KV 100MA ... |
1N5184 | Microsemi Co... | 27.95 $ | 1000 | DIODE GEN PURP 10KV 100MA... |
1N5188 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 400V 3A AX... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...