Allicdata Part #: | 1N5188-ND |
Manufacturer Part#: |
1N5188 |
Price: | $ 5.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 400V 3A AXIAL |
More Detail: | Diode Standard 400V 3A Through Hole |
DataSheet: | 1N5188 Datasheet/PDF |
Quantity: | 1000 |
125 +: | $ 4.89510 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 2µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes, especially rectifiers, have been a staple of electronics since the invention of electricity. These devices are used in a variety of applications, from power conversion to logic gate circuitry to radio communications. The 1N5188 rectifier is no exception, offering superior performance in these applications. In this article, we will explore the application fields and working principles of the 1N5188.
1N5188 Application Fields
The 1N5188 is primarily used in both high voltage and low voltage power conversion applications. For example, in AC-DC converter applications, the 1N5188 can improve the ripple factor due to its low forward voltage drop and high surge capability. Another use for the 1N5188 is in high voltage DC rectification, where it is often used in switching circuits. It can also be used in active rectification circuits, such as low dropout regulators, low dropout converters, and AC-DC converters. Finally, the 1N5188 can be used in logic gate circuits, providing a low voltage level shift and driving MOSFET transistors.
1N5188 Working Principle
The 1N5188 single rectifier is a simple three-terminal device with an anode, cathode, and gate electrode. In basic operation, a current is passed through the anode and cathode, and the gate electrode is connected to a positive voltage source. When a voltage is applied to the gate, it increases the mobility of charge carriers in the semiconductor material, which increases the current flow. This operation is known as forward bias. If the gate voltage is decreased or removed, the rectifier will become nonconductive, effectively “blocking” any current flow. This is known as reverse bias.
The 1N5188 is manufactured using a variety of semiconductor materials, including silicon, gallium arsenide, and indium arsenide. Each material provides different characteristics, with different electrical and thermal properties and different breakdown voltages. The 1N5188 is available in a variety of package sizes and voltage ratings.
The 1N5188 is an ideal solution for a wide variety of applications, including high efficiency power conversion, logic level shifting, and switching circuitry. Its simple construction and low forward voltage drop make it a preferred choice for designers looking for superior performance. In addition, its versatile package sizes and voltage ratings enable it to be used in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5186 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 100V 3A AX... |
1N5187 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 200V 3A AX... |
1N5189 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 500V 3A AX... |
1N5190 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 600V 3A AX... |
1N5194 | Microsemi Co... | 5.87 $ | 1000 | DIODE GEN PURP 70V 200MA ... |
1N5195 | Microsemi Co... | 5.87 $ | 1000 | DIODE GEN PURP 180V 200MA... |
1N5196 | Microsemi Co... | 5.87 $ | 1000 | DIODE GEN PURP 225V 200MA... |
1N5194UR | Microsemi Co... | 6.52 $ | 1000 | DIODE GEN PURP 70V 200MA ... |
1N5195UR | Microsemi Co... | 6.52 $ | 1000 | DIODE GEN PURP 180V 200MA... |
1N5196UR | Microsemi Co... | 6.52 $ | 1000 | DIODE GEN PURP 225V 200MA... |
1N5186US | Microsemi Co... | 6.66 $ | 1000 | DIODE GEN PURP 100V 3A AX... |
1N5187US | Microsemi Co... | 6.66 $ | 1000 | DIODE GEN PURP 200V 3A AX... |
1N5188US | Microsemi Co... | 6.66 $ | 1000 | DIODE GEN PURP 400V 3A AX... |
1N5189US | Microsemi Co... | 6.66 $ | 1000 | DIODE GEN PURP 500V 3A D5... |
1N5183 | Microsemi Co... | 27.96 $ | 1000 | DIODE GEN PURP 7.5KV 100M... |
1N5181 | Microsemi Co... | 27.96 $ | 1000 | DIODE GEN PURP 4KV 100MA ... |
1N5182 | Microsemi Co... | 27.96 $ | 1000 | DIODE GEN PURP 5KV 100MA ... |
1N5184 | Microsemi Co... | 27.95 $ | 1000 | DIODE GEN PURP 10KV 100MA... |
1N5188 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURP 400V 3A AX... |
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