1N5222B TR Discrete Semiconductor Products |
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Allicdata Part #: | 1N5222BTR-ND |
Manufacturer Part#: |
1N5222B TR |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE ZENER 2.5V 500MW DO35 |
More Detail: | Zener Diode 2.5V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N5222B TR Datasheet/PDF |
Quantity: | 20000 |
10000 +: | $ 0.04614 |
30000 +: | $ 0.04316 |
50000 +: | $ 0.03969 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 2.5V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 100µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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1N5222B TR Application Field and Working Principle
1N5222B TR is a single (Zener) diode designed and fabricated by various semiconductor companies. It is mainly used in various electronic circuits such as voltage regulator and waveform generator among others. Its main characteristics include high stability and very low operating temperature and is capable of producing almost no unwanted noise in the waveform output.
Applications
1N5222B TR is mainly used in voltage regulator circuits, waveform generator circuits, waveform measurement circuits, and current-limiting circuits among others. The regulator circuit application is especially important as it is used to maintain a fixed output voltage. Waveform generator circuit utilizes the 1N5222B TR to generate desired lengths and waveforms of output voltage. These are particularly useful in the design of signal amplifiers. The waveform measurement circuit uses 1N5222B TR to produce replicated waveforms of the 90° out of phase signal signals, which is helpful in evaluating circuit characteristic pattern shapes. Finally, 1N5222B TR is used in the current-limiting circuits for protecting the device from overcurrent conditions.
Working Principle
1N5222B TR has a junction made of two different materials, the N-type and the P-type, connected together and then reinforced by a high temperature bond. The two materials have very different electrical properties, which allows for both current density and low thermal resistance. The electrical current flow can be controlled by the amount of applied voltage, allowing for almost no noise due to the constant and stable output. The device can produce a maximum current of 1A and can withstand a maximum reverse voltage of 5.1V.
When the peak inverse voltage, which is defined as the voltage beyond which the device operates in the reverse breakdown region, is applied, the current is limited by the internal resistance and the device breaks down. The reverse voltages mainly depend on the silicon junctions and have a range of values. 1N5222B TR is able to survive voltages up to 5.1V, and then it operates in the breakdown region. The breakdown in 1N5222B TR is usually zener breakdown as the device has a Zener region between 5-5.1V, where the current is unlimited and the junction capacitance is minimized, thus providing a stable and noise-free output.
Conclusion
1N5222B TR is a single Zener diode designed and manufactured by numerous semiconductor companies. It has a wide range of applications, such as voltage regulator circuits, waveform generator circuits, waveform measurement circuits, and current-limiting circuits, among others. It is capable of producing almost no noise due to its high thermal resistance and stable output. It has a maximum current of 1A and can withstand a maximum reverse voltage of 5.1V. The device operates in the breakdown region when the peak inverse voltage is applied, and can withstand voltages up to 5.1V.
The specific data is subject to PDF, and the above content is for reference
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