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Diodes - Zener - Single

The 1N5247BTR is a Zener diode designed for Medium power, Voltage regulation applications. It is designed with a single silicon planar power diode having 1.6 Volt breakdown voltage. The device comes with a center tap for more consistent current sharing and with a special guard ring for improved avalanche characteristic.

Application Field

The 1N5247BTR can be used in transistor clipper, zener, and voltage regulator circuits. It is well-suited for use in battery applications, such as UPS systems, battery powered devices and emergency lighting applications. It can also be used in voltage and current regulation circuits, as well as in high-impedance line-level signal path and biasing applications.

Working Principle

The 1N5247BTR is a Zener diode consisting of two elements: the diode p-n junction and the guard-ring. The p-n junction is the main element responsible for current conduction. When a reverse bias voltage is applied to the junction, the current flow is Zener-breakdown limited. The guard-ring reduces the voltage drop across the junction, thus resulting in a more consistent Zener-breakdown voltage.

The 1N5247BTR anticipates the effects of capacitive loads, by providing the ideal current sharing between the guard-ring and the diode. This provides the user with improved performance and reliability in applications where capacitive loading is present.

The 1N5247BTR is designed to withstand up to 1.85V of peak-to-peak reverse voltage. Moreover, it can support up to 200mA of load current. In addition, it has a low noise figure of 0.35dB and a long-term stability of 0.5% over 1000 hours.

The 1N5247BTR is an ideal device for use in circuits that require voltage regulation, as well as for battery operated systems that require low noise, fast recovery and long-term reliability. It is also an excellent choice for line-level signal processing circuits and for high-impedance line biasing applications.

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