| Allicdata Part #: | 1N5248BVSTR-ND |
| Manufacturer Part#: |
1N5248B-TR |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 18V 500MW DO35 |
| More Detail: | Zener Diode 18V 500mW ±5% Through Hole DO-35 |
| DataSheet: |  1N5248B-TR Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.01761 |
| 30000 +: | $ 0.01603 |
| 50000 +: | $ 0.01444 |
| 100000 +: | $ 0.01365 |
| 250000 +: | $ 0.01232 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 18V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 21 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 14V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
| Base Part Number: | 1N5248 |
Description
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The 1N5248B-TR is a 3.3 volt, 500 mW silicon-zener diode. This diode makes use of a single-node, N-type silicon crystal structure, which is composed of two independent sections: anode and cathode. The anode region is isolated from the cathode region by an insulator layer which builds up a resistive field. This allows the current to be confined in the anode region, thus making it a single-node structure.The 1N5248B-TR’s application field is mainly focused on providing a reference voltage by use of its breakdown voltage, which allows it to withstand voltages up to 10.5 volts. Owing to this exceptional breakdown voltage, the 1N5248B-TR is specifically designed to be used in applications like linear regulator circuits, switched-mode power supplies and voltage reference controls. The working principle of 1N5248B-TR is centered on the zener breakdown effect, which states that any diode with a large enough reverse bias, varying from 7 to 10.5 volts, will allow a current through the diode breakdown path, thus creating a constant voltage drop.This process is generally known as zener breakdown, with the zener voltage being determined by the breakdown voltage of the diode. The current that the diode allows at this voltage drop is the zener current. The 1N5248B-TR makes use of this phenomenon by utilizing its 3.3 volt breakdown voltage and its 500 mW power rating to create a constant voltage against any voltage higher than the diode’s breakdown voltage. This is done by adjusting the power rating and the breakdown voltage according to the specific needs of the application. When in operation, the 1N5248B-TR’s current starts to flow as a result of a voltage bias between the anode and cathode. As the applied voltage crosses the breakdown voltage, a large current passes through the diode, thus creating a reference voltage. This voltage is then regulated by the zener current which then stabilizes the reference voltage.The 1N5248B-TR is designed to be an efficient device since its breakdown voltage is relatively low in comparison to other zener diodes. This allows the diode to operate in a wide range of applications, from simple voltage-reference controls to higher-intensity switched-mode power supplies with its high power capacity, without any significant drop in efficiency.In conclusion, the 1N5248B-TR is a very suitable device for applications which require a steady reference voltage along with an adjustable power rating. The device’s low breakdown voltage and high power rating make it a very efficient device, thus making it an excellent choice for any type of linear voltage reference designs.
The specific data is subject to PDF, and the above content is for reference
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