Allicdata Part #: | 1N5276B-TPTR-ND |
Manufacturer Part#: |
1N5276B-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 150V 500MW DO35 |
More Detail: | Zener Diode 150V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N5276B-TP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 150V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 1500 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 114V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N5276 |
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A 1N5276B-TP is a single Zener diode of the 1N5264B series type that is manufactured by Diodes Incorporated. It is a device that is designed to provide a high level of voltage regulation and low noise characteristics by using a Zener breakdown principle. This single Zener diode is designed to provide a very low forward voltage drop, high breakdown voltage, and low capacitance. In addition, it also has a specified voltage tolerance of 5%.
The 1N5276B-TP is a 9.1 Volt rating, 5 Kohm maximum power dissipation, 5 W Zener diode that is available in an axial lead package. This package makes the device suitable for a variety of applications such as automotive, power supplies, and electronic circuit protection. The 1N5276B-TP is a Zener diode that has a reverse breakdown voltage of 8.85 ± 5 %. It is fabricated with a proprietary surface mount technology that makes it suitable for a variety of high power applications.
The working principle of a 1N5276B-TP is based on a Zener breakdown effect. This effect occurs when a sufficiently high reverse voltage is applied across the device, causing the free electrons in the depletion layer to be accelerated and drawn into the Zener region. This accelerates the current flow through the diode and results in an avalanche breakdown. At this point, the diode’s reverse current increases exponentially and the voltage across it drops below its Zener voltage.
The 1N5276B-TP provides a number of features to make it suitable for a range of applications. It has a low forward voltage drop, high breakdown voltage, and low capacitance that make it ideal for power supply regulation, overvoltage protection circuits, and surge protection circuits. Additionally, this diode has low noise characteristics that makes it suitable for automotive, power supply, and electronic circuit protection. It also has a high junction temperature rating.
The 1N5276B-TP is a single Zener diode of the 1N5264B series type that is manufactured by Diodes Incorporated. It is a device that is designed to provide a high level of voltage regulation and low noise characteristics by using the Zener breakdown principle. Applications for this single Zener diode include automotive, power supplies, overvoltage protection circuits, surge protection circuits, and electronic circuit protection.
Given its high breakdown voltage, low forward voltage drop, and low capacitance, the 1N5276B-TP is ideal for a range of applications. Its Zener breakdown principle makes it suitable for power supply regulation, overvoltage protection circuits, surge protection circuits, and electronic circuit protection. Additionally, its low noise characteristics make it ideal for automotive, power supply, and other applications. In conclusion, the 1N5276B-TP is a single Zener diode of the 1N5264B series type that is ideal for a variety of applications due to its low forward voltage drop, high breakdown voltage, low capacitance, and low noise characteristics.
The specific data is subject to PDF, and the above content is for reference
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