| Allicdata Part #: | 1N5404GOS-ND |
| Manufacturer Part#: |
1N5404G |
| Price: | $ 0.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE GEN PURP 400V 3A DO201AD |
| More Detail: | Diode Standard 400V 3A Through Hole DO-201AD |
| DataSheet: | 1N5404G Datasheet/PDF |
| Quantity: | 4844 |
| 1 +: | $ 0.24570 |
| 10 +: | $ 0.18585 |
| 100 +: | $ 0.11561 |
| 500 +: | $ 0.07912 |
| 1000 +: | $ 0.06086 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 10µA @ 400V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AA, DO-27, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Base Part Number: | 1N5404 |
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The 1N5404G is a diode with single rectifier characteristics. It is capable of conducting a current of up to 3A and has a breakdown voltage of 400V. The device is primarily used in power supply and electronic circuits.
1N5404G Application Fields
The 1N5404G diode is often used in high voltage DC power supplies, in audio amplifiers, voltage regulators and switching power supplies. The device is able to provide rectification of AC signals and also act as an over-voltage protection in power supplies. The 1N5404G is rugged enough to withstand transients and pulse currents. In high voltage circuits, it is a popular choice for protecting against short circuits.
1N5404G Working Principle
The 1N5404G diode is a three-layer semiconductor device consisting of a resin encapsulated anode and cathode, together with a junction barrier between the two. The anode is the positive side and the cathode is the negative side of the diode. In normal operation, the junction barrier is reversed biased and its resistance is very high. This prevents any current from flowing from the anode to the cathode. When the applied voltage across the diode reaches its breakdown voltage of 400V, the junction barrier suddenly breaks down and current can flow from the anode to the cathode. This current can reach up to 3A and is equal to the flow of electrons, going from a higher to a lower energy level. The device is designed to withstand such extreme levels of current while protecting the circuit against short circuits and electrical transients.
Conclusion
The 1N5404G diode single rectifier is a highly versatile device, capable of performing various kinds of functions. From the simple act of rectifying AC signals, to the protection of high voltage power supplies, the device is a must-have for any power electronics designer or hobbyist. Its ability to withstand transients and pulse currents provide extra reliability for the circuit.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5400T-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5406G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5407-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5407RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 800V 3A AX... |
| 1N5400GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5404TA | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5401-B | Diodes Incor... | 0.12 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5406-E3/54 | Vishay Semic... | -- | 1370 | DIODE GEN PURP 600V 3A DO... |
| 1N5408-T | Diodes Incor... | -- | 80400 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5418TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 3A S... |
| 1N5401GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5404G A0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5402GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5406GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5401GHR0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5400GP-TP | Micro Commer... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5400-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5416US | Microsemi Co... | 9.69 $ | 172 | DIODE GEN PURP 100V 3A D5... |
| 1N5404G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5401/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5401-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GPP 3A DO-201ADDiod... |
| 1N5406GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5419 | Microsemi Co... | 4.65 $ | 1000 | DIODE GEN PURP 500V 3A B-... |
| 1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
| 1N5402TA | SMC Diode So... | 0.08 $ | 1250 | DIODE GEN PURP 200V 3A DO... |
| 1N5420 | Microsemi Co... | 6.22 $ | 257 | DIODE GEN PURP 600V 3A AX... |
| 1N5400-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5400-E3/73 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5402/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5406G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 600V 3A DO... |
| 1N5408-G | Comchip Tech... | 0.05 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5402G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5407RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
| 1N5400-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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1N5404G Datasheet/PDF