
Allicdata Part #: | 1N5419-ND |
Manufacturer Part#: |
1N5419 |
Price: | $ 4.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 500V 3A B-MELF |
More Detail: | Diode Standard 500V 3A Surface Mount B, SQ-MELF |
DataSheet: | ![]() |
Quantity: | 1000 |
147 +: | $ 4.18530 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 500V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 1µA @ 500V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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What is a 1N5419 Diode?
A 1N5419 diode is a type of single-phase silicon rectifier diode that is commonly used in a variety of power switching applications. It is the newest addition to the well-known 1N series of diodes from NXP Semiconductors, and is designed to offer exceptional performance and reliability. The main application for the 1N5419 diode is as a diode bridge in power switching applications.Application Field and Working Principles of a 1N5419 Diode
The 1N5419 is primarily used as a diode bridge in power switching applications. It is a single-phase, unidirectional silicon rectifier diode, meaning it will only pass one current flow in one direction. It is a low-cost, high-performance device that is commonly used in a variety of rectifier circuits in motor control, power supplies, and other switching applications. The application field of a 1N5419 diode includes high-voltage, high-frequency power rectification circuits as well as in diode bridge applications. This enables the use of the 1N5419 in wide-ranging applications, from power switching systems to motor control to UPS systems. The working principle of a 1N5419 is relatively simple: When current flows in the diode’s correct direction (anode to cathode), it passes through unimpeded. If the current is reversed, the diode blocks it, preventing reverse current flow. This allows the 1N5419 to be used in rectifier circuits, allowing the voltage to be converted from AC to DC while still providing protection against the AC current reversing.The 1N5419 also offers other benefits, such as high surge current capability, low forward voltage drop, and fast reverse recovery time. Additionally, because it is a silicon rectifier diode, the 1N5419 has high thermal stability, meaning it can withstand high temperatures and electric current without compromising performance.Conclusion
The 1N5419 diode is a type of single-phase, unidirectional silicon rectifier diode that can be used in a number of power switching applications. It offers exceptional performance and reliability at an affordable cost, making it an ideal choice for rectifier circuits and diode bridge applications. The 1N5419 has high surge current capability and fast reverse recovery time, making it indispensable for power switching systems and motor control.The specific data is subject to PDF, and the above content is for reference
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1N5400GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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1N5400 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5415US | Microsemi Co... | 6.31 $ | 1000 | DIODE GEN PURP 50V 3A D5B... |
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1N5401-B | Diodes Incor... | 0.12 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5401G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5417TR | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5402 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5400G A0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5400TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5404GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5404GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5408GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
1N5407-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5406-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5402G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5400-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5406GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5419 | Microsemi Co... | 4.65 $ | 1000 | DIODE GEN PURP 500V 3A B-... |
1N5406-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5401G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5405-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
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