1N5406G B0G Allicdata Electronics
Allicdata Part #:

1N5406GB0G-ND

Manufacturer Part#:

1N5406G B0G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 3A DO201AD
More Detail: Diode Standard 600V 3A Through Hole DO-201AD
DataSheet: 1N5406G B0G datasheet1N5406G B0G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.05334
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The 1N5406G B0G diodes are a type of single rectifier used in a wide range of applications, most notably as a high-voltage, fast-acting protector. As a fast-acting protector, the 1N5406G B0G diodes are used to protect voltage-sensitive components from potentially damaging voltage spikes, due to the diode’s quick response time. Diodes of this type are also used for overvoltage and undervoltage protection and can also be used in power-management circuits, motor and solenoid drivers, and clipping and switching circuits.

The 1N5406G B0G diodes are rated for a peak repetitive reverse voltage of 600 volts. This is the maximum voltage that the device can withstand prior to breaking down. The 1N5406G B0G diodes also have a moderate forward current of 3.0 amp, meaning that they can handle large amounts of current if needed. The device also has a low leakage current, making it ideal for applications that require a low flow of current.

The 1N5406G B0G diodes also have a working voltage range of 600 V and a reverse breakdown voltage of up to 950 V that helps to ensure that it can meet the needs of a variety of applications. In addition, the 1N5406G B0G diodes have a very fast switching speed between 0.1 to 6 microseconds, making it a great choice for applications that need quick response times, such as switching and pulse modulation.

The main working principle of a 1N5406G B0G diode is to create a one-way path for the flow of current. When the polarity of the applied voltage is positive, the diode allows current to flow in one direction. This allows the rectifier to protect voltage-sensitive components from damaging spikes. In the reverse direction of current, the diode will not allow the current to flow and thus, the device acts as a protector. In addition, the 1N5406G B0G diodes has protection against transient overvoltage and is capable of meeting the requirements of a variety of different circuits.

The 1N5406G B0G diodes are easy to mount devices, with a variety of options for installation. The package size for these devices is 40A, with a typical weight of around 3.2 grams. This will vary depending on the required current, with higher currents having a larger package size. The mounting can be done using a traditional screw. These devices are designed to be compatible with many forms of printed circuit boards, making them versatile and easy to install.

The 1N5406G B0G diodes are a common choice for a variety of applications due to their low power requirements and fast switching speed. They are used in many high-voltage circuits and can also be used in various power-management systems. The fast switching speed of these diodes can be used to protect voltage-sensitive components, as well as providing protection against transient overvoltage. The 1N5406G B0G is an excellent choice for applications that require quick response times and reliable protection against electrical surges.

The specific data is subject to PDF, and the above content is for reference

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