
Allicdata Part #: | 1N5401GHB0G-ND |
Manufacturer Part#: |
1N5401GHB0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 3A DO201AD |
More Detail: | Diode Standard 100V 3A Through Hole DO-201AD |
DataSheet: | ![]() |
Quantity: | 1000 |
14000 +: | $ 0.04922 |
Series: | Automotive, AEC-Q101 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
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1N5401GHB0G belongs to Diodes - Rectifiers - Single. This type of diode is widely used for various applications due to its low forward voltage drop and low leakage current. 1N5401GHB0G is a high-performance general purpose diode with an operating junction temperature range of -55°C to +125°C, maximum reverse voltage of 150V, forward voltage drop of 0.75V and a reverse leakage current of 1.5mA at 25°C.
In its most basic form, a diode is a two-terminal semiconductor device that acts like a one-way electrical valve. It conducts electric current in one direction and prevents a reverse flow of current in the other direction. A diode consists of a P-type and an N-type semiconductor material joint together, called a P-N junction. When a positive voltage is applied to the anode and a negative voltage to the cathode, a diode is forward biased allowing current flow or when the anode is negative and the cathode is positive, the diode is reverse biased and prevents the current flow.
The 1N5401GHB0G has a typical forward voltage drop of just 0.75V. This means that it can be used to regulate the voltage in any application where the desired voltage must be smaller than the supply voltage. This makes it an ideal choice for power supplies, voltage regulators and DC-DC converters. In addition, its low reverse current leakage of 1.5mA at 25°C makes it ideal for being used in sensitive analog and digital circuits.
The low forward voltage drop of the 1N5401GHB0G diode makes it an even better choice for applications where the desired voltage must be equal to or higher than the input voltage, such as rectifier circuits. The low forward voltage drop means that minimal voltage is dropped across the diode and the efficiency of the circuit is increased. This makes the 1N5401GHB0G a great choice for AC-DC converters and voltage-doubling circuits.
The 1N5401GHB0G can also be used in a wide variety of other applications. It can be used for DC-AC inverters, as an ideal diode in switched-mode power supplies, and as a bipolar-controlled device in current-regulating circuits. It can also be used in any circuit where a high-efficiency rectifier or an efficient voltage regulator is desired.
In conclusion, the 1N5401GHB0G is an ideal general-purpose diode due to its low forward voltage drop, low reverse leakage current and wide operating temperature range. It can be used in a variety of applications including power supplies, voltage regulators, DC-DC converters, rectifiers, AC-DC converters, DC-AC inverters, switched-mode power supplies and current-regulating circuits. With its wide range of features and benefits, the 1N5401GHB0G is a great choice for any application.
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1N5417TR | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5402 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5400G A0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5400TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5404GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5404GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5408GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
1N5407-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5406-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5402G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5400-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5406GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
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1N5405-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
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