
Allicdata Part #: | 1N5401GHR0G-ND |
Manufacturer Part#: |
1N5401GHR0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 3A DO201AD |
More Detail: | Diode Standard 100V 3A Through Hole DO-201AD |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.05555 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes, also known as rectifiers, are electrical components commonly used in many electronic designs. The 1N5401GHR0G is a single-phase rectifier diode typically used in a wide range of unique applications, including many industrial and household applications. This article will provide an overview of its application field and working principle.
The 1N5401GHR0G diode is a high-speed switching diode, designed for high-speed switching applications. It is an economical treatment for repetitive avalanche and over-voltage stresses. The surge current ratings of the 1N5401GHR0G below specified values guarantee effective protection from over-voltage and a long usage life. This diode also features a wide operating temperature range, making it suitable for use in high-temperature applications.
Due to its performance characteristics, the 1N5401GHR0G diode is commonly used in the following applications: power supplies, line regulators, DC-DC converters, amplifiers, data links, communication systems, inverters, thyristors, and fast switching circuits. This diode can also be used to rectify current in systems employing AC to DC conversion. The compact size of the 1N5401GHR0G allows it to be easily used in a variety of applications.
The 1N5401GHR0G is a two-terminal rectangular diode that has forward biased voltage of 1.107V and a reverse bias of 10V. The peak voltage and the average current handling capability of this diode are 350V and 1A, respectively. A unique feature of this diode is its very low reverse leakage current, making it suitable for circuits with precision startup objectives.
Similar to other rectifier diodes, the 1N5401GHR0G works by allowing the flow of current in one direction only. When a positive voltage is applied to its anode terminal, the diode’s p–n junction is forward biased and the current flows freely in the direction of the positive voltage, allowing for a very low forward voltage drop. When a positive voltage is applied to the cathode terminal, the diode’s p–n junction is reverse biased and the current cannot flow, resulting in a high reverse bias voltage drop.
When used in AC to DC conversion circuits, the 1N5401GHR0G allows current to flow in only one direction. This type of diode plays an essential role in providing steady and consistent output to the loads. The 1N5401GHR0G also rectifies and filters out any high-frequency components, making the device ideal for use in communication applications.
The 1N5401GHR0G utilizes a unique construction and high-temperature operation to ensure superior performance. This diode also features a low capacitance, making it suitable for use in high-speed switching applications. The low-inductance, high-current handling capability makes the 1N5401GHR0G diode an ideal component for systems requiring a very and stable voltage-current characteristic.
The 1N5401GHR0G diode is an efficient and reliable rectifier component designed for a wide range of applications. This diode has a low reverse leakage current, allowing it to be used in precision startup devices and switching applications. The low capacitance and high-speed operation of this diode make it suitable for communication systems and power supplies. Due to its efficient operation and unique performance characteristics, the 1N5401GHR0G is one of the most widely used single-phase rectifier diodes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5417C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 200V 4.5A ... |
1N5402GP-TP | Micro Commer... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5404-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GPP 3A DO-201ADDiod... |
1N5407TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
1N5400GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5407-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5400 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5415US | Microsemi Co... | 6.31 $ | 1000 | DIODE GEN PURP 50V 3A D5B... |
1N5404TA | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5401-B | Diodes Incor... | 0.12 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5401G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5417TR | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5402 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5400G A0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5400TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5404GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5404GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5408GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
1N5407-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5406-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5402G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5400-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5406GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5419 | Microsemi Co... | 4.65 $ | 1000 | DIODE GEN PURP 500V 3A B-... |
1N5406-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5401G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5405-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
Diodes - General Purpose, Power, Switchi...

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

DIODE GEN PURPOSE DO-204ALDiode

DIODE GEN PURP 400V 1A DO41Diode Standar...

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

DIODE GEN PURP 400V 500MA D5ADiode Stand...
