Allicdata Part #: | 1N5407OS-ND |
Manufacturer Part#: |
1N5407 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 800V 3A DO201AD |
More Detail: | Diode Standard 800V 3A Through Hole DO-201AD |
DataSheet: | 1N5407 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AA, DO-27, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 170°C |
Base Part Number: | 1N5407 |
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A 1N5407 is a silicon rectifier which is designed for high current applications. The device is constructed using a silicon carbide junction and has a rated current of 3.0A. The device is available in a dual-diode package, making it suitable for a variety of applications.
1N5407 Application Field
The 1N5407 is commonly used in the high-current applications, such as in the automotive industry and heavy-duty industrial machinery. Due to its high current rating, the device is also suitable for use in switching power supplies, DC-DC converters, and other power conversion circuits. Additionally, the device is suitable for use as a high-side switch in mobile devices and automotive audio systems.
1N5407 Working Principle
The 1N5407 is a silicon rectifier, meaning that it acts as a current rectifier by allowing current to flow only in one direction. This is achieved by having a silicon carbide junction between two electrodes. In operation, the voltage applied to the diode causes the electrons to jump across the junction, allowing the current to flow in one direction.
When the voltage is above the breakdown voltage of the diode, the current is allowed to flow. When the voltage drops below the breakdown voltage, the current is blocked. This means that the 1N5407 can be used in power conversion circuits, as it can switch off and on as needed.
Conclusion
The 1N5407 is a silicon rectifier designed for high-current applications. It is commonly used in the automotive industry, heavy-duty industrial machinery, and other power conversion circuits. The device works by allowing current to flow when the voltage applied is greater than the breakdown voltage of the diode, and blocking current when the voltage drops below the breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5401RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 3A AX... |
1N5400RLG | ON Semicondu... | -- | 2400 | DIODE GEN PURP 50V 3A DO2... |
1N5402RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 200V 3A DO... |
1N5406RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5402-T | Diodes Incor... | -- | 16800 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5401-T | Diodes Incor... | 0.08 $ | 6000 | DIODE GEN PURP 100V 3A DO... |
1N5404-E3/54 | Vishay Semic... | -- | 15400 | DIODE GEN PURP 400V 3A DO... |
1N5408-E3/54 | Vishay Semic... | -- | 22400 | DIODE GEN PURP 1KV 3A DO2... |
1N5401-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 100V 3A DO... |
1N5403-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 300V 3A DO... |
1N5408G A0G | Taiwan Semic... | 0.11 $ | 5500 | DIODE GEN PURP 1KV 3A DO2... |
1N5416 | Microsemi Co... | -- | 328 | DIODE GEN PURP 100V 3A AX... |
1N5420 | Microsemi Co... | 6.22 $ | 257 | DIODE GEN PURP 600V 3A AX... |
1N5417 | Microsemi Co... | 6.22 $ | 78 | DIODE GEN PURP 200V 3A AX... |
1N5418 | Microsemi Co... | -- | 230 | DIODE GEN PURP 400V 3A B-... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5408G | ON Semicondu... | -- | 22800 | DIODE GEN PURP 1KV 3A DO2... |
1N5400G | ON Semicondu... | -- | 3915 | DIODE GEN PURP 50V 3A DO2... |
1N5404G | ON Semicondu... | 0.27 $ | 4844 | DIODE GEN PURP 400V 3A DO... |
1N5406G | ON Semicondu... | 0.27 $ | 3923 | DIODE GEN PURP 600V 3A DO... |
1N5401G | ON Semicondu... | 0.27 $ | 3178 | DIODE GEN PURP 100V 3A AX... |
1N5407RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 800V 3A AX... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5408-B | Diodes Incor... | 0.29 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-B | Diodes Incor... | 0.29 $ | 670 | DIODE GEN PURP 400V 3A DO... |
1N5406G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 600V 3A DO... |
1N5407G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 800V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5401G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 100V 3A AX... |
1N5408G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-G | Comchip Tech... | 0.08 $ | 2400 | DIODE GEN PURP 400V 3A DO... |
1N5404G-T | Diodes Incor... | 0.08 $ | 10800 | DIODE GEN PURP 400V 3A DO... |
1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
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