| Allicdata Part #: | 1N5408GOS-ND |
| Manufacturer Part#: |
1N5408G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE GEN PURP 1KV 3A DO201AD |
| More Detail: | Diode Standard 1000V 3A Through Hole DO-201AD |
| DataSheet: | 1N5408G Datasheet/PDF |
| Quantity: | 22800 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1000V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AA, DO-27, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Base Part Number: | 1N5408 |
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A diode is an electrical device that allows the flow of an electric current in one direction but not in the opposite direction. Rectifiers are diodes that are designed in particular to convert alternating current (AC) to direct current (DC). A single diode rectifier is a device that only allows current to flow in one direction. The 1N5408G is a single silicon power diode that is often used for power conditioning and regulation. In this article, we will discuss the application field and working principle of the 1N5408G.
Application Field of 1N5408G
The 1N5408G diode is designed for power conditioning and regulation in high voltage, high frequency, and high power circuits. These types of circuits are commonly found in applications such as motor drives, high current rectifiers, industrial control circuits, and audio amplifiers. The 1N5408G has high surge capacity, can withstand voltage spikes, has low power losses, and is capable of withstanding temperatures of up to 200°C. This combination of characteristics make the 1N5408G suitable for use in motor drive and other high power applications.
Working Principle of 1N5408G
The 1N5408G is a single silicon power diode designed to allow electricity to flow in one direction and to prevent electricity from flowing in the opposite direction. When electricity flows in one direction through the diode, it is said to be in an “on” state. In this state, the diode acts like a closed switch. When electricity flows in the opposite direction, the diode is said to be in an “off” state. In this state, the diode acts like an open switch.
The 1N5408G diode is designed specifically to withstand high power and high voltage applications. It is capable of sustaining a reverse voltage of up to 800 volts and can handle up to three amps of continuous current. The construction of the diode is such that it is able to dissipate the excess heat produced when electricity passes through it, helping to protect the circuit from damage. The 1N5408G is also designed to minimize the power losses associated with diode rectification, which improves its efficiency in high power applications.
Conclusion
The 1N5408G is a single silicon power diode that can be used in a variety of power conditioning and regulation applications. It is capable of withstanding high voltage, high frequency, and high power applications and is designed to minimize power loss. With its robust construction and high surge capability, it is an excellent choice for motor drives and other high power applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| 1N5408-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 3A DO2... |
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| 1N5406TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
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| 1N5408GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5406T-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5406RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
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| 1N5404GP-TP | Micro Commer... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5408-B | Diodes Incor... | 0.29 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5404-E3/73 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5405 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
| 1N5401-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5402-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5401-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 100V 3A DO... |
| 1N5400 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5415US | Microsemi Co... | 6.31 $ | 1000 | DIODE GEN PURP 50V 3A D5B... |
| 1N5406-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5401 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5418-TAP | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
| 1N5408TA | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5400GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5407-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5401G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5407G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5417-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 3A S... |
| 1N5406G | ON Semicondu... | 0.27 $ | 3923 | DIODE GEN PURP 600V 3A DO... |
| 1N5401G | ON Semicondu... | 0.27 $ | 3178 | DIODE GEN PURP 100V 3A AX... |
| 1N5408-E3/54 | Vishay Semic... | -- | 22400 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5418 | Microsemi Co... | -- | 230 | DIODE GEN PURP 400V 3A B-... |
| 1N5407TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5407G | ON Semicondu... | 0.27 $ | 6900 | DIODE GEN PURP 800V 3A AX... |
| 1N5401-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
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1N5408G Datasheet/PDF