Allicdata Part #: | 1N5406GOS-ND |
Manufacturer Part#: |
1N5406G |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 600V 3A DO201AD |
More Detail: | Diode Standard 600V 3A Through Hole DO-201AD |
DataSheet: | 1N5406G Datasheet/PDF |
Quantity: | 3923 |
1 +: | $ 0.24570 |
10 +: | $ 0.18585 |
100 +: | $ 0.11561 |
500 +: | $ 0.07912 |
1000 +: | $ 0.06086 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AA, DO-27, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | 1N5406 |
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1N5406G is a silicon rectifier diode, which is manufactured in a standard DO-201AA package. It is used in various applications, such as power supply circuit rectifier, motor speed control, AC-DC converters and voltage regulator. The diode has unique features, such as low forward voltage drop and fast recovery reverse characteristic.
The Internal structure of the 1N5406G consists of two P-type layers of semiconductor material separated by an N-type layer. A single 1N5406G diode consists of an anode and cathode, which are labeled on the top of the package. The current flow through the diode can be controlled by the voltage applied to the anode. When current is passed in the forward direction, through the anode and cathode, it will allow flow of current. If the voltage applied to the anode is reversed, the current flow will stop and the diode will remain in the "OFF" state.
The working principle of a 1N5406G diode is based on the PN junction. When a voltage is applied to the diode, electrons will flow from the negatively charged semiconductor (N-type material) to the positively charged semiconductor (P-type material). This creates a large rectifying effect on the current flow, which is due to the large electric field created between the two materials. When a voltage is applied in the forward direction, the electric field will point in the forward direction which causes the current to flow. When a voltage is applied in the reverse direction, the electric field will point in the reverse direction, blocking the current flow.
The 1N5406G diode is used in many applications such as power supply rectifiers, motor speed control, AC-DC voltage converters and voltage regulator. The diode has several advantages over other types of diodes, such as its low forward voltage drop and fast recovery reverse characteristic. Additionally, it is relatively inexpensive compared to other rectifier diodes, making it a suitable choice for many applications.
The 1N5406G diode is an ideal choice for applications which require a fast recovery time and low forward voltage drop. It has several advantages over other types of rectifier diodes, including its low cost and compact size. The diode is commonly used in power systems and motor speed control circuits, due to its versatility and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5401RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 3A AX... |
1N5400RLG | ON Semicondu... | -- | 2400 | DIODE GEN PURP 50V 3A DO2... |
1N5402RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 200V 3A DO... |
1N5406RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5402-T | Diodes Incor... | -- | 16800 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5401-T | Diodes Incor... | 0.08 $ | 6000 | DIODE GEN PURP 100V 3A DO... |
1N5404-E3/54 | Vishay Semic... | -- | 15400 | DIODE GEN PURP 400V 3A DO... |
1N5408-E3/54 | Vishay Semic... | -- | 22400 | DIODE GEN PURP 1KV 3A DO2... |
1N5401-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 100V 3A DO... |
1N5403-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 300V 3A DO... |
1N5408G A0G | Taiwan Semic... | 0.11 $ | 5500 | DIODE GEN PURP 1KV 3A DO2... |
1N5416 | Microsemi Co... | -- | 328 | DIODE GEN PURP 100V 3A AX... |
1N5420 | Microsemi Co... | 6.22 $ | 257 | DIODE GEN PURP 600V 3A AX... |
1N5417 | Microsemi Co... | 6.22 $ | 78 | DIODE GEN PURP 200V 3A AX... |
1N5418 | Microsemi Co... | -- | 230 | DIODE GEN PURP 400V 3A B-... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5408G | ON Semicondu... | -- | 22800 | DIODE GEN PURP 1KV 3A DO2... |
1N5400G | ON Semicondu... | -- | 3915 | DIODE GEN PURP 50V 3A DO2... |
1N5404G | ON Semicondu... | 0.27 $ | 4844 | DIODE GEN PURP 400V 3A DO... |
1N5406G | ON Semicondu... | 0.27 $ | 3923 | DIODE GEN PURP 600V 3A DO... |
1N5401G | ON Semicondu... | 0.27 $ | 3178 | DIODE GEN PURP 100V 3A AX... |
1N5407RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 800V 3A AX... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5408-B | Diodes Incor... | 0.29 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-B | Diodes Incor... | 0.29 $ | 670 | DIODE GEN PURP 400V 3A DO... |
1N5406G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 600V 3A DO... |
1N5407G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 800V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5401G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 100V 3A AX... |
1N5408G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-G | Comchip Tech... | 0.08 $ | 2400 | DIODE GEN PURP 400V 3A DO... |
1N5404G-T | Diodes Incor... | 0.08 $ | 10800 | DIODE GEN PURP 400V 3A DO... |
1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
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