1N5417 Discrete Semiconductor Products

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The 1N5417 is a high-speed switching diode, which is able to withstand high power and a repetitive reverse voltage of 50V. This diode is made with different materials, including a silicon substrate and an aluminum body, allowing it to work at higher temperatures. The 1N5417 is a part of the thyristor family and is primarily used in applications such as power electronics, high voltage switching, and power supplies.

Application Field

The 1N5417 diode is used for a wide range of applications in high-voltage switching, power supplies and power electronics. It is able to handle high-voltage conditions and operates in temperatures up to 100°C. It is also used in switching converters, battery chargers, voltage multipliers, AC-DC and DC-DC converters, and other such applications. These diodes have a low forward voltage drop, which makes them ideal for high-efficiency power supplies.

Working Principle

The 1N5417 diode works on a simple principle of creating a low-resistance path when forward biased and cutting off the current path when reversed biased. When forward biased, an electrical current flows through the diode in the direction of the arrow on the body. This is called the forward direction, as current goes from the anode (positive terminal) to the cathode (negative terminal). When the voltage applied to the diode is reversed, the diode does not allow the current to pass through and is said to be in the reverse biased mode.

The 1N5417 diode is capable of withstanding high voltages and repetitive surges of up to 50V. This makes the 1N5417 an ideal choice for power electronics and applications where high switching speeds are required. The 1N5417 also works with an extremely low forward voltage drop, which helps to increase the power supply efficiency.

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