Allicdata Part #: | 1N5408GR0G-ND |
Manufacturer Part#: |
1N5408G R0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 3A DO201AD |
More Detail: | Diode Standard 3A Through Hole DO-201AD |
DataSheet: | 1N5408G R0G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.05780 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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1N5408G R0G is a single-phase and general purpose silicon rectifier diode with high power rectification. This diode has a typical current of 3A, a typical voltage of 400V, and a high junction temperature of 175°C. It offers robust, safe and effective power transmission in applications such as solar, wind, or other renewable energy sources, automotive industry, defense and security systems, home appliance motors and lighting, and telecommunications.
The 1N5408G R0G has three main components, the cathode, anode, and gate. The cathode is located on the periodic table at the center of the diode, while the anode is placed on the left and the gate on the right. When electrons flow through the diode, they first flow through the cathode, which is made up of a semiconductor material and has a negative voltage potential. The electrons then pass through the anode, which has a positive voltage potential, thereby creating a current. Finally, the electrons flow through the gate, which is also known as the "control terminal”, where the voltage is left to pass through as it is adjusted by a current control device.
The working principle of the 1N5408G R0G is based on the rectification process. When the anode is at positive voltage potential, the gate is closed, which performs an ideal rectification that allows the current to flow only in one direction. When the voltage of the anode reverses, the gate opens, allowing electrons to pass through the diode. As the diode is heated to the change in temperature, a current control device is applied to correct the voltage position. This process, known as "temperature compensation", helps to regulate the current flow through the diode.
The 1N5408G R0G is mainly used in industrial power application, such as renewable energy sources, automotive industry, defense and security systems, home appliance motors and lighting, and automotive industry, since the diode offers robust, safe, and effective power transmission with a wide voltage range. Its ability to regulate and control current flow helps to reduce power loss and improve efficiency. Additionally, the diode is ideal for AC-DC conversion, as it works well with high frequency AC inputs.
For its impressive characteristics, the 1N5408G R0G can also be used in DC-DC conversion, such as high power switched-mode power supply, DC-DC buck converter and DC-DC step down converter, to name but a few. Furthermore, the diode is also often used in UPS systems, lightning protection systems, and other consumer electronics.
In conclusion, the 1N5408G R0G is a single-phase, general purpose, and robust silicon rectifier diode that is used for various power applications and can withstand temperatures up to 175°C. It offers high efficiency in current rectification and provides the characteristics of high voltage range, high frequency, and temperature compensation. With these impressive characteristics and applications, the 1N5408G R0G makes a great choice for industrial power applications.
The specific data is subject to PDF, and the above content is for reference
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