Allicdata Part #: | 1N5419E3-ND |
Manufacturer Part#: |
1N5419E3 |
Price: | $ 4.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 500V 3A AXIAL |
More Detail: | Diode Standard 500V 3A Through Hole |
DataSheet: | 1N5419E3 Datasheet/PDF |
Quantity: | 1000 |
143 +: | $ 4.30770 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 500V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 1µA @ 500V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -65°C ~ 175°C |
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A 1N5419E3 is a type of single rectifier diode. It is a high voltage and high current diode, which can be used in a variety of applications. It is capable of providing rectification of AC and DC power with fuses and/or breakers.
The 1N5419E3 application field is best for applications for power rectification in automotive, industrial, communication, and medical equipment. It can also be used for signal rectification in radar systems, power supplies, medical equipment, digital signal processing, and clock signal reception. It is highly reliable, with peak current, surge current, and reverse voltage all surpassing industry standards.
The 1N5419E3 working principle is based on the rectification of alternating current, allowing current to flow through in one direction while blocking current in the other direction. This is accomplished with the diode\'s PN or positive-negative junction, where the negatively charged electrons of the P-type material are attracted to the left-positive electrode, while the right-negative electrons of the N-type material are attracted to the right-positive electrode. This structure creates a p-n junction diode that is suitable for rectification.
These diodes provide a low forward voltage drop and fast reverse recovery time, which is necessary for power rectification. They also have a wide range of power rating options for various applications. The 1N5419E3 is also temperature stable, making it suitable for use in high-temperature environments.
Also, the 1N5419E3 provides very low forward voltage drops during use, which helps reduce energy losses during power rectification. It also has a high current rating, which makes it suitable for applications where more power is required. This is a great benefit for medical applications, where it is essential for medical devices to be able to handle high currents.
The 1N5419E3 is a great choice for high-voltage and high-current applications. It is highly reliable, with its peak current, surge current, and reverse voltage values surpassing industry standards. Its fast forward voltage drop and fast reverse recovery time make it suitable for power rectification, while its temperature stability and wide range of power ratings make it suitable for many different applications in automotive, industrial, communication, and other electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5401RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 3A AX... |
1N5400RLG | ON Semicondu... | -- | 2400 | DIODE GEN PURP 50V 3A DO2... |
1N5402RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 200V 3A DO... |
1N5406RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5402-T | Diodes Incor... | -- | 16800 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5401-T | Diodes Incor... | 0.08 $ | 6000 | DIODE GEN PURP 100V 3A DO... |
1N5404-E3/54 | Vishay Semic... | -- | 15400 | DIODE GEN PURP 400V 3A DO... |
1N5408-E3/54 | Vishay Semic... | -- | 22400 | DIODE GEN PURP 1KV 3A DO2... |
1N5401-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 100V 3A DO... |
1N5403-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 300V 3A DO... |
1N5408G A0G | Taiwan Semic... | 0.11 $ | 5500 | DIODE GEN PURP 1KV 3A DO2... |
1N5416 | Microsemi Co... | -- | 328 | DIODE GEN PURP 100V 3A AX... |
1N5420 | Microsemi Co... | 6.22 $ | 257 | DIODE GEN PURP 600V 3A AX... |
1N5417 | Microsemi Co... | 6.22 $ | 78 | DIODE GEN PURP 200V 3A AX... |
1N5418 | Microsemi Co... | -- | 230 | DIODE GEN PURP 400V 3A B-... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5408G | ON Semicondu... | -- | 22800 | DIODE GEN PURP 1KV 3A DO2... |
1N5400G | ON Semicondu... | -- | 3915 | DIODE GEN PURP 50V 3A DO2... |
1N5404G | ON Semicondu... | 0.27 $ | 4844 | DIODE GEN PURP 400V 3A DO... |
1N5406G | ON Semicondu... | 0.27 $ | 3923 | DIODE GEN PURP 600V 3A DO... |
1N5401G | ON Semicondu... | 0.27 $ | 3178 | DIODE GEN PURP 100V 3A AX... |
1N5407RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 800V 3A AX... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5408-B | Diodes Incor... | 0.29 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-B | Diodes Incor... | 0.29 $ | 670 | DIODE GEN PURP 400V 3A DO... |
1N5406G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 600V 3A DO... |
1N5407G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 800V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5401G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 100V 3A AX... |
1N5408G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-G | Comchip Tech... | 0.08 $ | 2400 | DIODE GEN PURP 400V 3A DO... |
1N5404G-T | Diodes Incor... | 0.08 $ | 10800 | DIODE GEN PURP 400V 3A DO... |
1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
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