
Allicdata Part #: | 1N5830GN-ND |
Manufacturer Part#: |
1N5830 |
Price: | $ 9.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE SCHOTTKY 25V 25A DO4 |
More Detail: | Diode Schottky 25V 25A Chassis, Stud Mount DO-4 |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 8.37340 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 25V |
Current - Average Rectified (Io): | 25A |
Voltage - Forward (Vf) (Max) @ If: | 580mV @ 25A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 2mA @ 20V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | 1N5830 |
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The 1N5830 is a rectifier diode commonly used for rectifying the alternating current flow in electrical circuits. It is a single-phase bridge rectifier formed by four individual diodes in which each diode performs a specific function. This device is utilized in varying applications and works on the principle of rectification.
The 1N5830 application field includes rectification of low frequency oscillations in management circuits and medical systems, voltage stabilization systems, DC-DC power converters, power inverters, DC motors and lighting systems. This device offers general purpose rectification and is designed for surface mount, axial lead configuration and air mount design. The 1N5830 offers low forward voltage and low reverse leakage, allowing it to operate under high current and reverse voltage applications. The 1N5830 is also used for overvoltage protection.
The device works on the principle of rectification, which is the process of converting alternating current, or AC, into direct current, or DC. This is accomplished by two processes: conduction and blocking. During the conduction process, the diodes allow the positive current to pass through them from the positive to the negative side of the circuit. The blocking process uses a reverse bias, or electrical potential, to block the negative current, keeping it from flowing through the diode in a reverse direction.
The 1N5830 offers high performance, reliability and low conduction losses. Its low forward voltage and low reverse leakage make it ideal for use in heavy current and the most demanding applications. The device is designed to withstand overheating and burning out, eliminating the need for frequent replacements. The 1N5830 is also cost effective and highly efficient, making it a great choice for new and innovative designs where cost and performance are key.
The 1N5830 is an effective solution for many electrical applications. With its low cost and high performance, it is a great choice for any engineer or designer looking for a reliable and efficient solution for their rectification needs. Additionally, with its high temperature resistance and low conduction losses, the 1N5830 is one of the leading choices for industrial systems.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5819-E3/54 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5803 | Microsemi Co... | 4.0 $ | 1000 | DIODE GEN PURP 75V 1A AXI... |
1N5818-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
1N5820 B0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
1N5806E3/TR | Microsemi Co... | 0.0 $ | 1000 | UFR,FRRDiode Standard 150... |
1N5829R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 20V DO... |
1N5822HR0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5818-TP | Micro Commer... | 0.04 $ | 1000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5806 | Semtech Corp... | -- | 296 | DIODE GEN PURP 150V 3.3A ... |
1N5816R | Microsemi Co... | 32.42 $ | 1000 | RECTIFIER DIODEDiode |
1N5821RL | ON Semicondu... | -- | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
1N5827R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 30V DO... |
VS-1N5819TR | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5828R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 40V DO... |
1N5819 R0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5819HW-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A SOD... |
1N5820-E3/54 | Vishay Semic... | -- | 19600 | DIODE SCHOTTKY 20V 3A DO2... |
1N5814 | Microsemi Co... | 32.42 $ | 1000 | DIODE GEN PURP 100V 20A D... |
1N5817 R0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
1N5818-E3/54 | Vishay Semic... | -- | 5500 | DIODE SCHOTTKY 30V 1A DO2... |
1N5822-T | Diodes Incor... | -- | 1000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5818 A0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
1N5820RLG | ON Semicondu... | -- | 4500 | DIODE SCHOTTKY 20V 3A DO2... |
1N5817A-01 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A DO4... |
1N5820-A | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
1N5820HA0G | Taiwan Semic... | 0.09 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
1N5834 | GeneSiC Semi... | -- | 1500 | DIODE SCHOTTKY 40V 40A DO... |
1N5819/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5817-E3/54 | Vishay Semic... | 0.06 $ | 16500 | DIODE SCHOTTKY 20V 1A DO2... |
1N5804US | Microsemi Co... | 8.11 $ | 128 | DIODE GEN PURP 100V 1A D5... |
1N5817 BK | Central Semi... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A DO4... |
VS-1N5818TR | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
1N5818M-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 1A MEL... |
1N5821-A | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
1N5806C.TR | Semtech Corp... | 2.54 $ | 500 | DIODE GEN PURP 150V 2.5A ... |
1N5819HR0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5821HR0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
1N5830R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 25V DO... |
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