1N5822-E3/51 Allicdata Electronics
Allicdata Part #:

1N5822-E3/51GI-ND

Manufacturer Part#:

1N5822-E3/51

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 40V 3A DO201AD
More Detail: Diode Schottky 40V 3A Through Hole DO-201AD
DataSheet: 1N5822-E3/51 datasheet1N5822-E3/51 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Base Part Number: 1N5822
Description

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Diodes serve an important and widespread variety of functions in electronic circuits, such as signal rectification, signal switching and signal coupling. Generally speaking, diodes come in three categories, rectifiers, switches, and zeners. In this article, we will focus on the 1N5822-E3/51 diode, which is a single rectifier diode that possesses multiple uses in many different applications.

The 1N5822-E3/51 is a single-phase, Glass Passivated Super Fast Rectifier. The device is designed specifically for reversed polarity applications or operating temperature range as high as +175°C. A main feature is its ultrafast recovery time, which ensures outstanding performance in high frequency circuits. It also has a typical surge reverse power dissipation of 4W and non-repetitive peak forward and reverse voltage capabilities of up to 50V.

This diode is used increasingly in high frequency SMPS, choppers, switch-mode regulated power supplies, automotive applications, ac/dc converters, semiconductor test equipment, etc. It is ideal for effectively bypassing high frequency transients and rectifying signals that run through circuits. Such signals can be of either type, AC or DC. Moreover, it also provides excellent protection against short circuits and spikes such as flyback and crowbar configurations.

Generally speaking, the 1N5822-E3/51 is a zero-voltage-switched (ZVS) power semiconductor intended for switching high current in high-frequency operation. The zero-voltage switching (ZVS) ensures high efficiency, low switching losses and low power consumption in the circuit. In addition, its high-speed recovery time ensures faster switching and better circuit performance. The 1N5822-E3/51 is designed to provide excellent performance, reliability and thermal management, which helps in reducing power consumption and increasing efficiency in various applications.

The working principle of the 1N5822-E3/51 is simple, yet efficient. The diode closes when anode voltage grows higher than the cathode voltage, and will open when the opposite occurs. As soon as the anode voltage drops to a level lower than the cathode, the diode will block the flow of current through the circuit. This is known as the breakdown voltage, which determines the minimum voltage required for the diode to open. This feature of the 1N5822-E3/51 makes it suitable for signal rectification and current regulation.

In conclusion, the 1N5822-E3/51 is an ideal rectifier diode designed for high frequency, high current applications. Its high-speed switching, zero-voltage switching and low power consumption features ensure excellent performance and reliability in a variety of applications, including power supplies, converters, choppers, semiconductor test equipment and automotive systems. Its working principle is simple and efficient, ensuring efficient signal rectification and current regulation.

The specific data is subject to PDF, and the above content is for reference

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