| Allicdata Part #: | 1N5994B-ND |
| Manufacturer Part#: |
1N5994B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE ZENER 5.6V 500MW DO35 |
| More Detail: | Zener Diode 5.6V 500mW ±5% Through Hole DO-35 |
| DataSheet: | 1N5994B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Voltage - Zener (Nom) (Vz): | 5.6V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 25 Ohms |
| Current - Reverse Leakage @ Vr: | 2µA @ 3V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -65°C ~ 200°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
| Base Part Number: | 1N5994 |
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The 1N5994B is a single Zener diode designed for general purpose applications. It can be used for applications such as stabilizing, surge absorption, voltage regulation, and low voltage rectification. The diode is designed with a low forward voltage drop and a high reverse breakdown voltage. It offers very low leakage current and improved reverse surge characteristics.
The 1N5994B is a silicon, planar, Zener diode useful in many electronic applications requiring a low breakdown voltage. It is a 4.7-volt Zener diode with a maximum breakdown voltage of 4.7 volts. This diode is an ideal choice in voltage regulation and surge protection applications, providing a low current flow while allowing minimal voltage drop across the device.
The 1N5994B is designed with a lightly doped increased silicon separation utilizing planar technology that eliminates edge breakdown and improves surge handling capability. This diode also makes it suitable for high frequency applications, as well. The diode is also designed with a low forward voltage that allows for maximum current regulation.
The working principle behind the 1N5994B is based on the fact that when a diode is in forward bias, electrons flow rapidly from the N-type material to the P-type material. When the electrons reach the P-type material, they are then repelled, creating a strong barrier that prevents further current flow.
In the reverse bias configuration, the 1N5994B operates on the principles of reverse breakdown voltage, or Zener breakdown voltage. As the voltage between the two materials increases, the depletion region increases, allowing more current to flow and the diode to conduct. As the voltage continues to increase, the current continues to increase and the diode experiences a rapid increase in current until the breakdown voltage is reached.
In applications such as surge protection and voltage regulation, the 1N5994B has been found to provide excellent performance. The diode is also suitable for low voltage rectification and stabilizing or smoothing AC or DC signals. The diode is also known for its low reverse leakage current.
The 1N5994B is a versatile and reliable device that can be used in many types of applications. It is designed to provide maximum hot and humidity stress with low dynamic resistance. With its superior properties, this diode is ideal for use in many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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1N5994B Datasheet/PDF