
Allicdata Part #: | 1N730A-ND |
Manufacturer Part#: |
1N730A |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 47V 250MW DO35 |
More Detail: | Zener Diode 47V 250mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
491 +: | $ 1.24825 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 47V |
Tolerance: | ±5% |
Power - Max: | 250mW |
Impedance (Max) (Zzt): | 98 Ohms |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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A 1N730A is a general-purpose, single-junction, silicon, diffusion-type, series-shunt Zener diode. This diode can be used for many applications, from basic Zener diode voltage regulation circuits to power rectifiers and temperature compensation circuits. Zener diodes are widely used in a variety of applications, from basic voltage regulation to power rectifiers and temperature compensation circuits.
1N730A Application Field
The 1N730A application field spans several areas, including surge protection, voltage regulation, voltage reference sources and temperature compensation. The main application of 1N730A is in surge suppression, as it offers an effective method of protecting circuits without sacrificing too much performance in the process. The 1N730A can also be used in voltage regulation circuits, providing a stable voltage level for circuit protection devices, as well as a reference for other circuits.
The 1N730A can also be used in temperature compensation devices, as it has a temperature coefficient of 0.01V from -55 to +125 degrees Celsius. This allows it to provide excellent thermal stability and remain reliable throughout a wide range of temperatures. Finally, the 1N730A can also be used in voltage reference sources, such as voltage regulators, as it has a highly stable breakdown voltage.
1N730A Working Principle
The 1N730A is a silicon, diffusion-type, series-shunt Zener diode, which means that it has two opposing rectifying junctions connected in series. When forward biased, the diode operates like any rectifier diode, allowing current to flow in one direction. When reverse biased, however, the diode "breaks down" and begins to conduct current in the reverse direction.
This breakdown is a result of the creation of a large number of minority carriers, which provide a very low resistance current path in the reverse direction. This reverse current allows the diode to operate smoothly at a predetermined breakdown voltage, depending on the doping ratio of the diode material. As the doping ratio is consistent across different 1N730A units, each diode will have the same breakdown voltage of 11.2V each time.
This Zener breakdown voltage is what makes the 1N730A so useful. It allows it to provide a steady voltage reference, by virtue of its low voltage regulation coefficient, which measures how much the device\'s voltage may exceed its nominal value. This makes it an ideal choice for voltage regulation, surge protection and temperature compensation circuits.
Conclusion
The 1N730A is a general-purpose, single-junction, silicon, diffusion-type, series-shunt Zener diode. It is able to provide a very stable 11.2V breakdown voltage and is used in a variety of applications, including surge protection, voltage regulation, voltage reference sources and temperature compensation circuits. The 1N730A operates by creating a large number of minority carriers when reverse biased, which provide an extremely low resistance path and allow the diode to breakdown at the predetermined 11.2V.
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