Allicdata Part #: | 1N746ATR-ND |
Manufacturer Part#: |
1N746ATR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 3.3V 500MW DO35 |
More Detail: | Zener Diode 3.3V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N746ATR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 3.3V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 28 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N746 |
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1N746ATR Application Field & Working Principle
Diodes - Zener - Single
The 1N746ATR diode belongs to a class of diodes known as Zener or avalanche diodes, which are specially designed to withstand high levels of reverse-bias voltage which produce high electric fields. These diodes are designed for use in a variety of fields, such as radio frequency reception and regulation. The 1N746ATR is a small signal diode with a Zener voltage of 5.6V and a breakdown voltage of 5.2V. It is designed for use in general purpose applications such as switch-mode power supplies, power supplies, and regulator circuits.
The working principle of Zener diodes such as the 1N746ATR is based on the fact that, when reverse-biased, diodes produce an electric field that prevents carriers from getting recombined. This electric field can increase to a level where the nucleus of atoms acquires enough repulsive force to overcome the attractive force produced by the nucleic field, creating an avalanche breakdown that can carry large currents. This principle has been successfully applied to provide a wide variety of voltage stabilizing applications.
In general, the Zener diode can be thought of as a device that works by creating a constant potential difference between two nodes. The two nodes of the diode act as a gate to the movement of electrons between them; when the voltage increases, electrons are forced through the diode, resulting in a current flow. This current is proportional to the reverse-bias voltage, allowing a constant voltage to be achieved across the two nodes. This operation is particularly useful in applications where voltage drops or surges need to be regulated, such as in a power supply with a large load.
The 1N746ATR is a small-signal, low-power Zener diode suitable for general purpose use and is available in a range of package sizes. The diode offers good stability, low leakage current and is capable of withstanding up to 5.6V reverse voltage with a maximum surge current rating of 50mA. The diode has a maximum power dissipation rating of 800mW and an ambient temperature range of -40°C to +85°C.
The 1N746ATR is designed for use in low-power applications, as the low power dissipation rating means that it is unlikely that the diode will be capable of dissipating more than 800mVW of power. However, despite the low rating, the diode is still capable of providing an effective voltage regulation solution, making it suitable for a variety of general-purpose applications.
In conclusion, the 1N746ATR is a useful and versatile Zener diode that is suitable for a variety of applications, such as switch-mode power supplies, power supplies, and regulator circuits. The low power dissipation rating makes it particularly useful for low-power applications, while the high breakdown voltage and stability make it suitable for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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1N749A TR | Central Semi... | 0.06 $ | 10000 | DIODE ZENER 4.3V 500MW DO... |
1N749ATR | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 4.3V 500MW DO... |
1N746ATR | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 3.3V 500MW DO... |
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