1N747AUR-1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N747AUR-1 diode is a type of Zener diode specifically designed for alternative energy equipment such as solar panels and wind turbines. This diode is a form of semiconductor diode, which uses a reverse breakdown mechanism to regulate the current at an efficient level without sacrificing the electrical power of the input. This is especially beneficial when it comes to solar panels, as solar energy is highly dependent on the environment and can often be inconsistent throughout the day. The 1N747AUR-1 diode is able to regulate the current and allow for a more consistent flow of current, which results in greater efficiency of power.

In a Zener diode, the diode is created with a thin, heavily doped region of n-type material connecting two larger regions of opposite type. This junction is designed to allow the current to flow in the same direction regardless of the direction of the voltage. As a result, when the voltage exceeds the breakdown voltage of the diode, a reverse breakdown occurs, which causes the current to be limited. This results in a regulated flow of current, which eliminates the potential for over-regulation and maintains an efficient level of electrical power.

The 1N747AUR-1 diode is a single layer diode and is designed for high-voltage applications such as solar panel and wind turbines. This diode is capable of withstanding up to 25 volts of reverse breakdown voltage, allowing for a more efficient and regulated flow of current during times of power challenges. As a result, this diode is highly advantageous due to its ability to handle higher voltages and its well-rounded regulation behavior.

The 1N747AUR-1 employed a planar geometry in which a P-type substrate is sandwiched between two pieces of N-type. The P-type doping is thinner and heavily doped than the N-type doping, allowing for a voltage to be applied across the junction during operation. When the applied voltage exceeds the breakdown voltage, a reverse breakdown occurs due to the large depletion region created by the heavily doped P-type substrate. As a result, current can flow without fear of overheating or overvoltage, resulting in a more efficient system.

The 1N747AUR-1 diode is an invaluable asset for alternative energy systems who are looking for a more consistent current for their applications. The diode is able to support high-voltage applications without fear of overregulation due to its reverse breakdown capability. With a planar geometry and a P-type substrate sandwiched between two pieces of N-type, the 1N747AUR-1 is a safe and reliable option for any alternative energy source.

The specific data is subject to PDF, and the above content is for reference