1N747A_T50R Allicdata Electronics
Allicdata Part #:

1N747A_T50R-ND

Manufacturer Part#:

1N747A_T50R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 3.6V 500MW DO35
More Detail: Zener Diode 3.6V 500mW ±5% Through Hole DO-35
DataSheet: 1N747A_T50R datasheet1N747A_T50R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 3.6V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 24 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N747
Description

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Diodes and zener diodes are important components used in various electrical components and systems. The 1N747A_T50R diode is one type of diode that is used in many applications. Its working principle is based on the principle of rectification, which involves creating a positive or negative voltage differential across electrical contacts. This diode is single-piece and is rated at 50V.

The 1N747A_T50R diode is mainly used in applications that require fast and reliable switching or rectification. Some common uses of this diode are in rectifier circuits, voltage regulators and protection circuits. For example, this diode can be used in voltage regulation circuits to provide a stable and consistent voltage output, as well as in protection circuits to guard against overvoltage, current and power surges. Its fast switching speed makes it suitable for use in communications systems and high-frequency applications, where it can help reduce noise and improve performance.

The technical specifications of the 1N747A_T50R diode are quite impressive, with a breakdown voltage of 50V, peak forward current rating of 500mA and average forward current of 400mA. It also has a low forward voltage drop of 1.3V and fast switching speed of 8 ns, making it an ideal choice for high-frequency applications. In addition, the diode also has very low leakage current and reverse current, making it suitable for use in low-noise and low-impedance circuits.

The 1N747A_T50R diode works by allowing electricity to flow in only one direction, from the anode to the cathode. The reverse breakdown voltage of the diode is what prevents the current from flowing in the opposite direction, so that it does not create an electric current spike. This diode is also able to withstand high temperature and voltage applications, making it suitable for use in a variety of applications including high-power circuits such as power supplies.

The working principle of the 1N747A_T50R diode can be seen in its basic electrical characteristics. When forward biased, the diode allows current to flow from the anode to the cathode. When reverse biased, the diode prevents current flow in the opposite direction, which is why it is used in protection and rectification circuits. Additionally, the diode can also be used to limit the current in a circuit, by providing only enough current needed to power the circuit.

In conclusion, the 1N747A_T50R diode is a single-piece diode that is used in a variety of applications, from rectification and protection to voltage regulation and current limiting. Its fast switching speed makes it suitable for use in high-frequency applications and its breakdown voltage rating makes it ideal for use in high temperature and voltage applications. This diode is highly reliable and provides good performance, making it an ideal choice for a variety of electrical components and systems.

The specific data is subject to PDF, and the above content is for reference

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