1N758A TR Discrete Semiconductor Products |
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Allicdata Part #: | 1N758ACSTR-ND |
Manufacturer Part#: |
1N758A TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE ZENER 10V 500MW DO35 |
More Detail: | Zener Diode 10V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N758A TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 17 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N758A TR is a single Zener diode. It is part of a family of diodes with similar properties designed for various applications. It is designed for voltage regulation and current regulation.
The 1N758A TR is used mainly in power supplies and DC-DC converters to keep the output voltage steady. Its wide operating range and low reverse current makes it suitable for customers looking for a Zener diode to regulate the output voltage of their power supply. It is also used in electronic circuits as a voltage reference to protect against sudden spikes in voltage, and as a rectifier in power supplies. The diode’s ability to maintain a constant voltage drop when under load makes it an ideal choice for laser diode combines, noise suppression and other applications requiring stable regulation.
The 1N758A TR Zener diode is manufactured using epitaxial silicon, which makes it efficient in rectifying the output voltage and suppressing noise. The epitaxial process has also improved the diodes’ low power dissipation. The 1N758A is a Zener diode with three terminals; an anode (A), a cathode (K) and a case (C). The anode and cathode are marked with arrows and are identical in length. The case is made from a glass-filled thermoplastic encapsulant.
The 1N758A TR is designed for operation in the forward-biased regime, and the associated breakdown mechanism influences the maximum voltage it can handle. When the voltage applied across the diode’s terminals exceeds a certain value, the diode enters the breakdown regime and a high current begins to flow through it. This high current is limited by the internal resistance of the diode, known as the Zener impedance. As a result, the 1N758A TR provides a constant output voltage when the current passing through it changes.
The 1N758A TR’s case has an integrated terminal which is electrically isolated from the anode and cathode. This terminal can be used as an output point for measuring the diode’s output voltage, or for controlling the diode’s output voltage. It is also designed for operation in the reverse-biased regime, where it can function as a clamping device.
The 1N758A TR Zener diode is a reliable and efficient voltage regulator, capable of providing stable voltage when under load. Its wide operating range and low current requirements make it suitable for most applications. Its integrated terminal also provides flexibility in controlling the output voltage. The diode’s low power dissipation and efficient rectification technology make it a cost-effective and reliable choice for regulating the output voltage of DC-DC converters, protection circuits and other precision applications.
The specific data is subject to PDF, and the above content is for reference
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