1N758A_T50R

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Diodes - Zener - Single

1N758A_T50R is a single Zener diode which simultaneously blocks and protects against electrostatic discharge (ESD) and electrical overstress (EOS). It is a highly integrated ESD/EOS protection device with a terminating resistor and various other components integrated into the package to minimize board space and minimize cost savings.

Application Field

1N758A_T50R is most often used in electronic systems as a transient suppressor, such as connecting sensitive circuit elements, such as power MOSFETs and small transistors, to ground. As an excellent ESD/EOS protection diode, 1N758A_T50R is also suitable for USB, 12V, 3.3V and 5V voltage lines, or other areas that require ESD/EOS protection.

Working Principle

This 1N758A_T50R operates as a Zener diode with a breakdown voltage of 5.6V. It provides an ESD/EOS protection with excellent clamping characteristics that guarantees a minimum threshold voltage with a maximum clamping voltage of 12V.

During operation, when an ESD spike hits the voltage line, the electric current runs through 1N758A_T50R diode at the same time. Since the Zener diode has a higher reverse breakdown voltage, the current will be diverted, ensuring that ESD/EOS does not cause electrical damage to other vulnerable components.

In addition to this Zener diode, other components, such as resistors, capacitors, and RC networks, are used to provide additional filtering and transient suppression. These components ensure that the diode can rapidly absorb large transients that exceed the breakdown voltage of the diode.

When used in circuits or systems, 1N758A_T50R should be handled with caution, because wrong installation or incorrect orientation of the device can lead to failure, and any shock or vibration exceeding their thermal rating can also cause device damage.

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