1N825 Allicdata Electronics
Allicdata Part #:

1N825-ND

Manufacturer Part#:

1N825

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 6.2V 500MW DO35
More Detail: Zener Diode 6.2V 500mW ±5% Through Hole DO-35 (DO-...
DataSheet: 1N825 datasheet1N825 Datasheet/PDF
Quantity: 157
Stock 157Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 3V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Description

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The 1N825 is a silicon-based Zener diode with a characteristic single junction. It offers low power loss and is capable of excellent performance over the standard temperature range used for semiconductor diodes. This type of Zener diode has a wide range of applications in electronic and telecommunications products, computers, medical instruments, power supplies, and industrial control systems.

Zener diodes are used in various circuit applications to control voltages to particular levels. This is a very important task in circuit design and the 1N825 provides a reliable and efficient solution. The main function of a Zener diode is to protect other components from overvoltage conditions. By clamping and limiting the applied voltage, they can provide protection to other components and circuits.

The 1N825 uses a combination of the ohmic and junction properties of silicon to maintain the voltage across it between two predetermined levels. This phenomenon makes it the first choice for applications requiring highly accurate voltage regulation over a wide temperature range. The combination of high voltage accuracy and stability over temperature makes the 1N825 a perfect match for applications requiring highly accurate voltage regulation.

The 1N825 consists of a P+ substrate and an N+ guard layer to protect the junction from voltage spikes and temperature fluctuations. This structural design means that the device works even in extreme temperature ranges. The diode\'s temperature coefficient is low and steady even when exposed to high temperatures. This makes the device suitable for installation in environments where temperature fluctuations are common.

The 1N825 operates in a closed-loop which allows it to automatically maintain the voltages at pre-determined levels. The guard layer and the P+ substrate of the device keep the voltages around the junction insulated from external sources. This ensures that the voltage remains constant over time. The current flow through the 1N825 is controlled by the breakdown voltage ratio of the device. It is measured in the ratio of the device resistance to the breakdown voltage, which is usually expressed in kΩ/V.

The 1N825 is widely used in various applications such as automotive, communication, computer, and consumer products. Due to its superior performance over temperature range, it is also widely used in power supplies. The 1N825 is also ideal for medical equipment, where high accuracy and stability is needed. Additionally, the 1N825 is compatible with several CMOS and TTL logic families.

In conclusion, the 1N825 is an excellent choice for an application that requires highly accurate voltage regulation over a wide temperature range. Its low power loss, wide compatibility, and superior performance make it a great choice for many applications. Its combination of excellent performance, temperature range, and breakdown voltage ratio makes it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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