1N827A

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1N827A is a single Zener diode designed for reverse voltage protection, voltage regulation, precision voltage references, and other applications. It is a two-terminal, unidirectional semiconductor device with a wide range of junction breakdown voltages from 2.4 V to 200 V. Some of its more notable features include electrical parameters like low leakage, low capacitance and tight zener voltage tolerance. This article will explain the technology behind the 1N827A, its application fields, and its working principles.

Technology Behind the 1N827A

The 1N827A is composed of a high-grade silicon die, an electrically conductive and mechanically supportive epoxy-molded package, and a variety of techniques used to create a robust structure and valued characteristics. Combined, these components forge the semiconductor device, allowing it to pass or block currents, regulate voltage and perform various functions.

To create the 1N827A’s strong junction region, an intentionally impure crystal is doped with impurities from either a donor impurity or an acceptor impurity. This process is known as diffusion. The donor impurity adds many electrons to the material, creating a somewhat negative region, and the acceptor impurity removes electrons from the material, creating a somewhat positive region. As a result, at the junction of the two regions, an electric field develops.

Once the junction region is ready, the electrical parameters of the 1N827A can be adjusted through additional processes such as depositing a thin layer of aluminum over the junction region. This layer is connected to the control electrode, allowing the device to have precise control over the current flow. This provides users with fundamental components such as precise voltage references and precise temperature coefficients.

Application Fields

The 1N827A is particularly useful in voltage-sensitive applications, where accurate voltage references and reverse voltage protections are a must. Some of its common applications include performing referenced monitoring, transceiver impedance matching, overvoltage protection, and clamping to limit voltage levels.

The 1N827A is commonly used in communication and data transfer, where the need for precise voltage references and reference monitoring is essential. Its high reverse voltage breakdown, low capacitance and low leakage current makes it excellent for controlling current and providing protection for radio receivers, transceivers and digital signal processors.

Due to its ability to provide constant current/voltage output even in the presence of transient voltages, the 1N827A is used in medical diagnostic and monitoring equipment. It is also used in LED lighting systems to ensure that LED illumination remains consistent and to protect LED circuitry.

Working Principle

The 1N827A has a built-in PN junction that creates a barrier between the electrodes. An electric field is created, and current can only pass through this junction in one direction. If the voltage is less than the breakdown voltage, the reverse junction bias is maintained, and no current will flow through the device. However, when the voltage exceeds the breakdown voltage, current starts to flow, and the electric field strength increases accordingly.

The reverse leakage current is determined by the electric field, and the Zener breakdown voltage is determined by the junction area and materials used to create the junction region. Additionally, when the reverse current begins to flow, the electrostatic field begins to deplete, creating a low saturated resistance zone and eventually a breakdown region with a high resistance level.

The 1N827A’s voltage regulation operation is due to its dynamic breakdown region. When the reverse voltage is applied, the PN junction will create an accumulation region with a high conductivity, where an avalanche diode current is generated. This allows the 1N827A to act as both a voltage regulator and a current clipper, providing consistent performance no matter the applied voltage.

Conclusion

The 1N827A is a single Zener diode with a wide range of junction breakdown voltages from 2.4V to 200V. Its sharp breakdown characteristics, low leakage and tight zener voltage tolerance make it suitable for a variety of different applications such as overvoltage protection, precision voltage references, transceiver impedance matching and more. The 1N827A operates by creating a PN junction, an accumulation region and an avalanche diode current to regulate voltage and provide consistent performance.

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