1N824 Allicdata Electronics
Allicdata Part #:

1N824-ND

Manufacturer Part#:

1N824

Price: $ 2.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 6.2V 500MW DO35
More Detail: Zener Diode 6.2V 500mW ±5% Through Hole DO-35 (DO-...
DataSheet: 1N824 datasheet1N824 Datasheet/PDF
Quantity: 1000
268 +: $ 2.28845
Stock 1000Can Ship Immediately
$ 2.54
Specifications
Series: --
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 3V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Description

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The 1N824 is a single Zener diode that is designed for the purpose of regulating pulsed demands for point-of-load applications. It provides reliable, precise and stable frequency and resolution control through the use of a voltage controlled switching topology. The device is usually packaged in a small SOIC package which provides a low profile, high current carrying capability and flexibility in the voltage and current handling requirements of modern designs.

The 1N824 diode offers a wide variety of applications due to its reliable precision regulation levels. It has great energy efficiency compared to other diodes because of its low togger switching threshold and low dynamic drops. It can be used as a voltage regulator in low voltage switching power supplies, providing steady performance under variable loads. Also, it can be used as a temperature compensator in electronic temperature sensors, providing precise two-state switching action at different temperatures. It can also be used in voltage-controlled switches, enabling a precise voltage control with low delay.

The working principle of the 1N824 diode is based on its capability to change its conductance characteristics as a function of the voltage applied to it. The device consists of a junction diode in which the majority charge carriers, electrons, are held into a large bandgap potential barrier, creating a region of space-charge depletion or doped region. The majority charge carriers in this region are pulled toward the anode, creating a lower electric field in the depletion region. Depending on the value of the reverse voltage applied, the charge carriers in the depletion region will change, resulting in a different conductance between the anode and cathode of the diode. This is what enables the 1N824 to regulate the voltage in a power supply.

In conclusion, the 1N824 Zener diode is a highly efficient and precise voltage regulator, suitable for many different applications requiring precise and reliable control of voltage levels. Its versatile characteristics and ease of use make it particularly suitable for point-of-load power regulation applications. Thanks to its low switching threshold and low dynamic drop, it is also energy efficient, making it ideal for applications requiring precision regulation levels.

The specific data is subject to PDF, and the above content is for reference

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