Allicdata Part #: | 1N825A-1E3MS-ND |
Manufacturer Part#: |
1N825A-1E3 |
Price: | $ 3.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | ZENER DIODES |
More Detail: | Zener Diode 5.89V 500mW ±5% Through Hole DO-35 (DO... |
DataSheet: | 1N825A-1E3 Datasheet/PDF |
Quantity: | 1000 |
200 +: | $ 3.05944 |
Series: | -- |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.89V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 3V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 (DO-204AH) |
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Diodes have been an integral part of the electrical and electronic industry since the early 20th century. In this article, we will discuss the application field and working principle of the 1N825A-1E3 zener diode. Zener diodes, also known as avalanche diodes, are a type of semiconductor device that are mainly used for voltage regulation, and is specially designed to operate in the breakdown region and regulate the output voltage. They are used in various applications where a stable voltage is needed, and their operation is based on the principle of reverse bias voltage breakdown.The 1N825A-1E3 is a high-current, high-reliability, three-terminal Zener diode with an industry-leading surge capability. It is ideal for space-constrained applications and is available in a variety of packages, from the ultra-compact 0.2mm × 0.2mm SOD-323F to the space-saving SOT-23 package. This device has a dual-leaded option, allowing it to be mounted either vertically or horizontally on the board.The maximum working voltage of the 1N825A-1E3 is 9V, and its breakdown voltage is 9V with a maximum Zener impedance of 6Ω. It features a high surge capability that allows it to be used in applications that require robust performance in circuit environments prone to large voltage/current variations. The device has a wide operating temperature range of -65°C to +125°C and is available in single- and dual-die packages. The working principle of the 1N825A-1E3 is the same as that of other Zener diodes. It consists of two semiconductor layers - one thin p-type and one thicker n-type layer. When reverse bias is applied to the diode, the electric field between the two layers becomes stronger, allowing electrons to tunnel through the thin p-type layer. This process causes the diode to enter the breakdown region and start conducting current, regulated by the applied reverse bias voltage. The 1N825A-1E3 is well suited for use in a variety of applications ranging from consumer electronics such as mobile devices and automotive systems to industrial and aerospace applications. The 1N825A-1E3 can also be used in buck-mode voltage regulators as an output voltage reference to set the output voltage level for a given input. Its robust construction and high surge capability make it an ideal solution for designs that require highly reliable performance in challenging environments. In summary, the 1N825A-1E3 is a high-reliability, high-surge Zener diode designed for a wide range of applications. It is designed to operate in the breakdown region and regulate the output voltage and is well-suited for environments prone to large voltage/current variations. The application field and working principle of the 1N825A-1E3 zener diode has been discussed in this article.
The specific data is subject to PDF, and the above content is for reference
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