Allicdata Part #: | 1N914MS-ND |
Manufacturer Part#: |
1N914 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 75V 200MA DO35 |
More Detail: | Diode Standard 75V 200mA Through Hole DO-35 (DO-20... |
DataSheet: | 1N914 Datasheet/PDF |
Quantity: | 955 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 50mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 500nA @ 75V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 (DO-204AH) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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1N914 is a kind of semiconductor, which is known as a diode and utilized for a variety of applications of electrical, mechanical, chemical and thermal processes. It is a Small Signal Diode, belonging to the Rectifiers, Single type of semiconductor. Its main function is rectification, which can be defined as the process of converting alternating current (AC) electricity into direct current (DC) electricity.
Due to its small structure, 1N914 is often used to rectify small-scale electronic signals. It is commonly used in systems built using TTL logic, audio amplifiers and widely adopted in radiofrequency (RF) and analog circuits. Since its forward current flow is low and voltage drop is higher, 1N914 is widely adopted in audio circuits.
The working principle of 1N914 is based on the charge control current-voltage principle. Its base-emitter structure is identical to that of transistor, with an anode, a cathode and a junction between them. It is usually composed of silicon-based n-type semiconductor, featuring good electric conductivity when forward biased. Under the condition of forward bias, majority holes and minority electrons are injected from p-type to n-type semiconductor substrate, thus forming a depletion region between the two layers. Due to the depletion region, the holes and electrons pass slowly, resulting in an increase in voltage drop between the anode and the cathode.
At the same time, 1N914 has a breakdown region, above which a high voltage can suddenly cause a large current to flow, creating a unique rectifying characteristic. The breakdown voltage is known as the zener voltage and its reverse current is known as zener current. This feature allows 1N914 to diverge the current intensity and stabilize a smooth direct current flow.
In addition, 1N914 diode is equipped with a recovery characteristic, where it has negligible recovery time. This feature makes it even more ideal for highly efficient rectification conduction to limit power losses. Moreover, 1N914 is very fast in terms of its response time to a change in the circuit input, generally being able to react within nanoseconds
Therefore, 1N914 is widely utilized for its rectifying capabilities in all kinds of electrical equipment and systems, for example, in power supplies and other voltage regulating circuits, as well as many audio and visual applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N914B | ON Semicondu... | -- | 69789 | DIODE GEN PURP 100V 200MA... |
1N916B | ON Semicondu... | 0.07 $ | 9899 | DIODE GEN PURP 100V 200MA... |
1N914 | Microsemi Co... | -- | 955 | DIODE GEN PURP 75V 200MA ... |
1N914UR | Microsemi Co... | 2.05 $ | 272 | DIODE GEN PURP 75V 200MA ... |
1N916 | ON Semicondu... | 0.07 $ | 2791 | DIODE GEN PURP 100V 200MA... |
1N914-T50A | ON Semicondu... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914BWT | ON Semicondu... | -- | 16000 | DIODE GEN PURP 75V 200MA ... |
1N914TAP | Vishay Semic... | 0.01 $ | 40000 | DIODE GEN PURP 100V 300MA... |
1N914ATR | ON Semicondu... | 0.01 $ | 50000 | DIODE GEN PURP 100V 200MA... |
1N914TR | ON Semicondu... | -- | 60000 | DIODE GEN PURP 100V 200MA... |
1N914BTR | ON Semicondu... | -- | 220000 | DIODE GEN PURP 100V 200MA... |
1N914BWS | ON Semicondu... | -- | 297000 | DIODE GEN PURP 75V 150MA ... |
1N914B A0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE GEN PURP 100V 150MA... |
1N914BW RHG | Taiwan Semic... | 0.01 $ | 1000 | DIODE GEN PURP 75V 150MA ... |
1N914BWS RRG | Taiwan Semic... | 0.01 $ | 1000 | DIODE GEN PURP 100V 150MA... |
1N914B,113 | NXP USA Inc | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914_S00Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914_T26A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914A_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B_S00Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B_S62Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914BTR_S00Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914TR_S00Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916A_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916ATR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916TR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
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