1N914 Allicdata Electronics
Allicdata Part #:

1N914MS-ND

Manufacturer Part#:

1N914

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 75V 200MA DO35
More Detail: Diode Standard 75V 200mA Through Hole DO-35 (DO-20...
DataSheet: 1N914 datasheet1N914 Datasheet/PDF
Quantity: 955
Stock 955Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
Speed: Small Signal =
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 175°C
Description

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1N914 is a kind of semiconductor, which is known as a diode and utilized for a variety of applications of electrical, mechanical, chemical and thermal processes. It is a Small Signal Diode, belonging to the Rectifiers, Single type of semiconductor. Its main function is rectification, which can be defined as the process of converting alternating current (AC) electricity into direct current (DC) electricity.

Due to its small structure, 1N914 is often used to rectify small-scale electronic signals. It is commonly used in systems built using TTL logic, audio amplifiers and widely adopted in radiofrequency (RF) and analog circuits. Since its forward current flow is low and voltage drop is higher, 1N914 is widely adopted in audio circuits.

The working principle of 1N914 is based on the charge control current-voltage principle. Its base-emitter structure is identical to that of transistor, with an anode, a cathode and a junction between them. It is usually composed of silicon-based n-type semiconductor, featuring good electric conductivity when forward biased. Under the condition of forward bias, majority holes and minority electrons are injected from p-type to n-type semiconductor substrate, thus forming a depletion region between the two layers. Due to the depletion region, the holes and electrons pass slowly, resulting in an increase in voltage drop between the anode and the cathode.

At the same time, 1N914 has a breakdown region, above which a high voltage can suddenly cause a large current to flow, creating a unique rectifying characteristic. The breakdown voltage is known as the zener voltage and its reverse current is known as zener current. This feature allows 1N914 to diverge the current intensity and stabilize a smooth direct current flow.

In addition, 1N914 diode is equipped with a recovery characteristic, where it has negligible recovery time. This feature makes it even more ideal for highly efficient rectification conduction to limit power losses. Moreover, 1N914 is very fast in terms of its response time to a change in the circuit input, generally being able to react within nanoseconds

Therefore, 1N914 is widely utilized for its rectifying capabilities in all kinds of electrical equipment and systems, for example, in power supplies and other voltage regulating circuits, as well as many audio and visual applications.

The specific data is subject to PDF, and the above content is for reference

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