Allicdata Part #: | 1N914TR_S00Z-ND |
Manufacturer Part#: |
1N914TR_S00Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 200MA DO35 |
More Detail: | Diode Standard 100V 200mA Through Hole DO-35 |
DataSheet: | 1N914TR_S00Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 5µA @ 75V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes are essential components for current circuit designs. Notably, the 1N914TR_S00Z diode is a versatile device that is commonly used in modern electronic applications. This article provides an overview of the device, describing its features, applications, and working principle.
Features
The 1N914TR_S00Z diode has a small package allowing which offers several unique advantages. First, it has a low leakage current, due to its small size. Second, it allows for a high power dissipation in a very small area, making it ideal for applications where space is limited. Third, the package is protected against reverse voltage damage, which further enhances its durability and reliability. In addition, it has a temperature range of -65°C to 150°C.
Applications
The 1N914TR_S00Z diode is used in a variety of applications. It is often employed in power supplies, inverters, photovoltaics, UPS systems, and solar cells. In general, it is most commonly used in DC (direct current) power supplies. Additionally, it is frequently used in automotive systems and as temperature sensors. It is also used in medical and telecommunications systems.
Working Principle and Operation
The 1N914TR_S00Z diode operates according to the principle of rectification. The device is composed of two layers, an anode and a cathode, which are connected by a reverse biased junction. When a positive voltage is applied to the lead of the diode, an electric current flows through the diode, while a reverse voltage has no effect on the circuit. The great advantage of using this type of diode is that it allows for a high current flow, while maintaining a low voltage drop.
Additionally, the 1N914TR_S00Z diode is capable of blocking any AC (alternating current) signals, which is essential for many power supplies. It also has a reverse recovery time of 5-6 µs and a junction capacitance of 7-10 pF. These features make the 1N914TR_S00Z particularly suitable for applications where fast and reliable signal transmission is required.
Conclusion
The 1N914TR_S00Z diode is an essential component for a wide range of electronic devices. Its key features include low leakage current, high power dissipation, protection against reverse voltage damage, wide operational temperature range and fast recovery time. As such, the device is ideally suited for applications such as power supplies, inverters, photovoltaics, automotive systems, and medical and telecommunications systems.
The specific data is subject to PDF, and the above content is for reference
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1N914B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914BTR_S00Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
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