Allicdata Part #: | 1N914B-ND |
Manufacturer Part#: |
1N914B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 200MA DO35 |
More Detail: | Diode Standard 100V 200mA Through Hole DO-35 |
DataSheet: | 1N914B Datasheet/PDF |
Quantity: | 69789 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 5µA @ 75V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N914B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The 1N914B has many practical applications, and it is considered a small signal switching signal diode and a high-speed amplifier. It is primarily used in signal electronics, RF systems and in digital electronic circuits. It also has numerous industrial, commercial and military applications.
Features and Advantages
The 1N914B diode is widely used in digital systems, automotive electronics and RF amplifiers. Because it is a small signal diode, it is ideal for use in switching and signal circuits. The current capacity of this diode is low, making it suitable for use with low-voltage and low-power circuits. It is also a low-noise, high-speed diode, providing excellent signal isolation and speed performance.
The 1N914B features a low capacitance and minimal leakage current, which allows it to be used in high-frequency applications. Its low reverse-recovery time is also advantageous, providing excellent timing accuracy in digital circuits. Its low junction capacitance and low resistance also make it suitable for high-speed amplifier applications.
Working Principle
The 1N914B is commonly used for signal switching applications in digital electronics. It is operated in a forward bias configuration, meaning that current flows from the anode to the cathode when the diode is forward biased. When the diode is reverse biased, current does not flow.
The 1N914B also operates as a high-speed amplifier. When the diode is forward biased, it reduces the voltage drop across it, increasing the current that passes through it. This allows the diode to operate as an amplifier, increasing the current passing through the circuit.
Conclusion
The 1N914B is a reliable and versatile diode. It is an excellent choice for applications in digital systems, automotive electronics, and RF amplifiers. Its low junction capacitance and low resistance make it well-suited for high-speed amplifier applications. It also operates as an efficient signal switching circuit, providing excellent isolation and timing accuracy.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N914B | ON Semicondu... | -- | 69789 | DIODE GEN PURP 100V 200MA... |
1N916B | ON Semicondu... | 0.07 $ | 9899 | DIODE GEN PURP 100V 200MA... |
1N914 | Microsemi Co... | -- | 955 | DIODE GEN PURP 75V 200MA ... |
1N914UR | Microsemi Co... | 2.05 $ | 272 | DIODE GEN PURP 75V 200MA ... |
1N916 | ON Semicondu... | 0.07 $ | 2791 | DIODE GEN PURP 100V 200MA... |
1N914-T50A | ON Semicondu... | 0.01 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914BWT | ON Semicondu... | -- | 16000 | DIODE GEN PURP 75V 200MA ... |
1N914TAP | Vishay Semic... | 0.01 $ | 40000 | DIODE GEN PURP 100V 300MA... |
1N914ATR | ON Semicondu... | 0.01 $ | 50000 | DIODE GEN PURP 100V 200MA... |
1N914TR | ON Semicondu... | -- | 60000 | DIODE GEN PURP 100V 200MA... |
1N914BTR | ON Semicondu... | -- | 220000 | DIODE GEN PURP 100V 200MA... |
1N914BWS | ON Semicondu... | -- | 297000 | DIODE GEN PURP 75V 150MA ... |
1N914B A0G | Taiwan Semic... | 0.01 $ | 1000 | DIODE GEN PURP 100V 150MA... |
1N914BW RHG | Taiwan Semic... | 0.01 $ | 1000 | DIODE GEN PURP 75V 150MA ... |
1N914BWS RRG | Taiwan Semic... | 0.01 $ | 1000 | DIODE GEN PURP 100V 150MA... |
1N914B,113 | NXP USA Inc | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914_S00Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914_T26A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914A_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B_S00Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B_S62Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B_T50A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914BTR_S00Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N914TR_S00Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916A | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916A_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916ATR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916B_T50R | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
1N916TR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 200MA... |
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