1SS315TPH3F Discrete Semiconductor Products |
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Allicdata Part #: | 1SS315TPH3FTR-ND |
Manufacturer Part#: |
1SS315TPH3F |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE SCHOTTKY 5V 30MA USC |
More Detail: | RF Diode Schottky - Single 5V 30mA USC |
DataSheet: | 1SS315TPH3F Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03780 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Schottky - Single |
Voltage - Peak Reverse (Max): | 5V |
Current - Max: | 30mA |
Capacitance @ Vr, F: | 0.6pF @ 0.2V, 1MHz |
Resistance @ If, F: | -- |
Operating Temperature: | 125°C (TJ) |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | USC |
Base Part Number: | 1SS315 |
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1SS315TPH3F is a high-performance diode that can be used in a range of RF applications. It is a type of semiconductor device that is used to convert a range of AC electrical signals into a DC voltage or current. It can be used in radio frequency (RF) contexts, such as transmitters, receivers, amplifiers, frequency multipliers, and oscillators.
The 1SS315TPH3F is a medium power Schottky barrier diode with low forward voltage drop, low reverse-leakage current, and fast switching capability. It can handle up to 3 amperes peak, and comes in a SOT-323 case with a flat lead design for easy installation. It is also RoHS compliant, which is an important feature for electronic designers that are looking for components that comply with environmental regulations.
The operating temperature range of the 1SS315TPH3F is from -65 to +150 Celsius, which means it can be used in a wide range of applications. This diode can be used to control electrical signals in areas such as radio transmitters, radio receivers, television receivers, amplifiers, frequency multipliers, oscillators, cable television systems, and more.
In terms of its working principle, the 1SS315TPH3F works by controlling the flow of current passing through it. The diode contains two semiconductor junctions that are formed between two materials. When a voltage is applied across the two junctions, the device will only allow current to flow in one direction, which is determined by the materials that make up the junctions. This is how the device can control the flow of current for applications such as radio and television receivers and transmitters.
As mentioned above, the 1SS315TPH3F is a high-performance diode and can be used in a wide range of RF applications. It has a low forward voltage drop and a low reverse-leakage current, as well as being RoHS compliant. It can handle up to 3 amperes peak, and its operating temperature range is from -65 to +150 Celsius, making it a versatile component for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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