Allicdata Part #: | 1SS400SMT2RTR-ND |
Manufacturer Part#: |
1SS400SMT2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE GEN PURP 80V 100MA EMD2 |
More Detail: | Diode Standard 80V 100mA Surface Mount EMD2 |
DataSheet: | 1SS400SMT2R Datasheet/PDF |
Quantity: | 8000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 80V |
Capacitance @ Vr, F: | 3pF @ 0.5V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | EMD2 |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | 1SS400 |
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Introduction
1SS400SMT2R is a single Schottky barrier rectifier diode, also commonly referred to as a Schottky diode. It is a type of semiconductor device with a metal-semiconductor junction comprised of a layer of metal in contact with a layer of P-type semiconductor material on an N-type substrate. This diode offers low forward voltage drop and fast switching characteristics, making it ideal for numerous applications where switch-mode power supplies, high power inverters, and solar converters are used.
Application Field
1SS400SMT2R is ideal for use in a variety of applications that experience high current and surge loading, such as switch-mode power supplies, high power inverters, solar converters and DC-DC converters. It is also suitable for drivMode power supplies, high power inverters, and solar converters are used. Its low forward voltage drop and fast switching speed make it an ideal choice for applications where frequent switch-mode power supply switching takes place. The device is qualified to AEC-Q101 standards and is compliant with the RoHS and REACH directives.
Working Principle
The working principle of 1SS400SMT2R can be easily understood by looking at the schematic diagram below. The diode is composed of a P-type region sandwiched between an N-type substrate and a metal contact. The P region contains mobile charge carriers, electrons, which for the semiconductor junction to be rectified. When the anode appears to receive a positive bias, electrons are repelled from the P-region and are eventually collected in the N-region, forming a current that flows from the anode to the cathode. Conversely, electrons flow in the opposite direction when the anode receives a negative bias. In this way, 1SS400SMT2R rectifies alternating current into direct current.
The device\'s low forward voltage drop is due to the fact that the Schottky barrier creates only a small barrier voltage, allowing electrons to easily cross the junction.
Conclusion
The 1SS400SMT2R diode is a highly efficient rectifier diode with fast switching speeds and low forward voltage drop, making it ideal for power supply switching applications. Its AEC-Q101 qualified status and compliance with the RoHS and REACH directives make it an excellent choice in many electronics applications. The working principle of the diode can be easily explained by looking at the schematic diagram of the device.
The specific data is subject to PDF, and the above content is for reference
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