1SS417,L3M Discrete Semiconductor Products |
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Allicdata Part #: | 1SS417L3MTR-ND |
Manufacturer Part#: |
1SS417,L3M |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE SCHOTTKY 40V 100MA FSC |
More Detail: | Diode Schottky 40V 100mA Surface Mount fSC |
DataSheet: | 1SS417,L3M Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.02249 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 620mV @ 50mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 5µA @ 40V |
Capacitance @ Vr, F: | 15pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | fSC |
Operating Temperature - Junction: | 125°C (Max) |
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Diodes are electronic components used for the purpose of rectifying electrical signals or providing a path for current flow. Rectifiers are diodes which are specifically designed to convert alternating current (AC) to direct current (DC) through a process known as rectification. Rectifiers are used in a wide range of applications, such as power conditioning, instrumentation, and signal processing. A single rectifier, such as the 1SS417L3M, is a basic type of diode that has one terminal connected to the anode, and the other connected to the cathode.
The 1SS417L3M diode is a unpolarized rectifier that falls in the category of rectifiers. It is a general-purpose rectifier with a low reverse leakage current and low leakage current. The 1SS417L3M is available in a variety of packages, including DIP, SIP, and SMD.
The working principle of the 1SS417L3M device is based on the PN junction diode. A PN junction is formed by combining two types of semiconductor material, namely a P-type and an N-type material. The P-type material contains an excess of positive holes while the N-type material contains an excess of negative electrons. When the PN junction is formed, a depletion region is created in which there are no mobile charge carriers.
In the forward-biased region of the PN junction, holes from the P-type material and electrons from the N-type material move toward the junction. When the electrons and holes recombine at the junction, they create a layer of negative charges on the P-type side of the junction and a layer of positive charges on the N-type side. This creates a potential barrier across the junction, which opposes further electron or hole movement and thus stops the flow of current.
In the reverse-biased region, the voltage applied to the junction is opposite to the natural potential barrier. This creates electric field that attracts electrons from the N-type material to the P-type material and holes to the N-type material. This creates a high electric field on the junction and the resulting electric current flowing along the junction causes the diode to be a rectifier.
The 1SS417L3M is mainly used in applications such as AC line current-limiting, power supply rectification, blocking, and wave-shaping. It can also be used in circuits where voltage regulation is desired due to its low forward voltage drop. The device has many advantages, including its fast switching speed, low leakage current, and low reverse leakage current. Furthermore, the device is capable of handling high-frequency applications, making it suitable for use in high-speed, high-power systems.
In conclusion, the 1SS417L3M is an example of a single rectifier diode, which is classified as a PN junction rectifier. The device has many applications in power conditioning, instrumentation and signal processing, and has several advantages, including its low leakage current, fast switching speed, and low forward voltage drop. It is suitable for high-frequency applications and can withstand high temperatures.
The specific data is subject to PDF, and the above content is for reference
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