1SS427,L3M Allicdata Electronics

1SS427,L3M Discrete Semiconductor Products

Allicdata Part #:

1SS427L3MTR-ND

Manufacturer Part#:

1SS427,L3M

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: DIODE GEN PURP 80V 100MA SOD923
More Detail: Diode Standard 80V 100mA Surface Mount SOD-923
DataSheet: 1SS427,L3M datasheet1SS427,L3M Datasheet/PDF
Quantity: 50000
10000 +: $ 0.02249
30000 +: $ 0.02117
50000 +: $ 0.01985
100000 +: $ 0.01764
Stock 50000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 1.6ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1SS427,L3M diode is a member of the rectifier family, classified as a single diode. Diodes, in general, are two-terminal ubiquitous semiconductor devices, used in a wide range of electronic equipment. A single diode is a type of diode used in electronic circuits for the purpose of rectifying alternating current (AC).

The 1SS427,L3M diode is classified as a single diode, and it has a diverse range of applications when it comes to rectifying AC currents. This wide range of applications is made possible by virtue of its functionality, features, and specs. Specifically, the 1SS427,L3M has a fast forward recovery time, voltage clamping, surge suppressor, and low forward voltage drop. It also has a wide operating temperature range of - 65 to +175 degrees Celsius, and a high forward current of 1A.

The fundamental principle behind the rectangular function of the 1SS427,L3M diode is the PN junction. A PN junction is the interface between two materials; a P-type material and a N-type material. The junction formed from the combination of the two materials is a semiconductor junction. The properties of the P-type material differ from the properties of the N-type material which is used to control the flow of electrical current.

The current flow in a diode is controlled by the PN junction. The PN junction acts as a valve that opens when the potential difference applied between the anode and the cathode is greater than the junction potential difference or the potential barrier of the PN junction. Upon application of a forward voltage greater than the junction potential difference, the diode enters in its forward-biased mode, and current begins to flow.

Reverse-biasing a PN junction does not allow current to flow very easily. This is because, as the bias voltage increases, a point is reached in which the PN junction’s electric field is sufficiently large to begin and to reflect the majority of the electrons being injected into the N-type material by the external voltage source.

The 1SS427,L3M is specifically designed to be used as a rectifier for AC waveforms. The waveform is applied to the anode terminal of the diode, forcing it to enter its forward-biased state. As the waveform alternates, the diode will also alternate between its forward and reverse states, allowing current to pass in one direction only. This type of rectification process allows DC signals to be received from an AC waveform.

The 1SS427,L3M is also used in a wide range of applications, including telecom and computer systems, power supplies, automotive, audio, and RF applications. In these applications, the rectifier diode is used to protect the sensitive components of the equipment from voltage spikes and surges, as well as to regulate the output voltage.

In conclusion, it is evident that the 1SS427,L3M diode is an invaluable asset when it comes to rectifying AC waveforms. Its fast forward recovery time, voltage clamping, surge suppressing, and low forward voltage drop make it an ideal choice for a wide range of applications. Its rectifying properties, enabled by the PN junction, ensures that the current flows in one direction only, allowing signals to be received as DC signals.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "1SS4" Included word is 28
Part Number Manufacturer Price Quantity Description
1SS400CSFHT2RA ROHM Semicon... -- 8000 SWITCHING DIODES (CORRESP...
1SS413CT,L3F Toshiba Semi... 0.03 $ 20000 DIODE SCHOTTKY 20V 50MA S...
1SS400CST2RA ROHM Semicon... -- 16000 DIODE GEN PURP 80V 100MA ...
1SS417CT,L3F Toshiba Semi... 0.0 $ 1000 DIODE SCHOTTKY 40V 100MA ...
1SS427,L3M Toshiba Semi... 0.03 $ 50000 DIODE GEN PURP 80V 100MA ...
1SS413,L3M Toshiba Semi... 0.03 $ 20000 DIODE SCHOTTKY 20V 50MA F...
1SS400SMT2R ROHM Semicon... -- 8000 DIODE GEN PURP 80V 100MA ...
1SS400TE61 ROHM Semicon... -- 782 DIODE GEN PURP 80V 100MA ...
1SS403,H3F Toshiba Semi... 0.05 $ 6000 DIODE GEN PURP 200V 100MA...
1SS400GT2R ROHM Semicon... -- 88000 DIODE GEN PURP 80V 100MA ...
1SS417,L3M Toshiba Semi... 0.03 $ 10000 DIODE SCHOTTKY 40V 100MA ...
1SS404,H3F Toshiba Semi... 0.03 $ 1000 DIODE SCHOTTKY 20V 300MA ...
1SS416,L3M Toshiba Semi... 0.03 $ 10000 DIODE SCHOTTKY 30V 100MA ...
1SS405,H3F Toshiba Semi... 0.04 $ 1000 DIODE SCHOTTKY 20V 50MA E...
1SS401(TE85L,F) Toshiba Semi... 0.0 $ 1000 DIODE SCHOTTKY 20V 300MA ...
1SS423(TE85L,F) Toshiba Semi... 0.0 $ 1000 DIODE ARRAY SCHOTTKY 40V ...
1SS402TE85LF Toshiba Semi... 0.0 $ 1000 DIODE ARRAY SCHOTTKY 20V ...
1SS400 RKG Taiwan Semic... 0.01 $ 1000 DIODE GEN PURP 100V 200MA...
1SS400 RSG Taiwan Semic... 0.01 $ 1000 DIODE GEN PURP 100V 200MA...
1SS400 RJG Taiwan Semic... 0.01 $ 1000 DIODE GEN PURP 100V 200MA...
1SS400-G Comchip Tech... 0.03 $ 1000 DIODE GEN PURP 80V 100MA ...
1SS400-TP Micro Commer... 0.03 $ 1000 DIODE GEN PURP 90V 100MA ...
1SS400CST2R ROHM Semicon... -- 1000 DIODE GEN PURP 80V 100MA ...
1SS400T5G ON Semicondu... -- 8000 DIODE GEN PURP 100V 200MA...
1SS400T1G ON Semicondu... -- 57000 DIODE GEN PURP 100V 200MA...
1SS416CT,L3F Toshiba Semi... 0.0 $ 1000 DIODE SCHOTTKY 30V 100MA ...
1SS424(TPL3,F) Toshiba Semi... 0.0 $ 1000 DIODE SCHOTTKY 20V 200MA ...
1SS412(TE85L,F) Toshiba Semi... 0.0 $ 1000 DIODE ARRAY GP 80V 100MA ...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics