1SS416,L3M Allicdata Electronics

1SS416,L3M Discrete Semiconductor Products

Allicdata Part #:

1SS416L3MTR-ND

Manufacturer Part#:

1SS416,L3M

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: DIODE SCHOTTKY 30V 100MA FSC
More Detail: Diode Schottky 30V 100mA Surface Mount fSC
DataSheet: 1SS416,L3M datasheet1SS416,L3M Datasheet/PDF
Quantity: 10000
10000 +: $ 0.02249
30000 +: $ 0.02117
50000 +: $ 0.01985
100000 +: $ 0.01764
Stock 10000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Base Part Number: 1SS416
Description

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Diodes are essential elements of modern electronics, and they come in a number of various types and sizes. One of the most common types of diode is the single-phase, three-level MOSFET (MOSFET) rectifier (1SS416L3M), which is the focus of this article. Below is an overview of its application fields and working principles.

Application fields

A 1SS416L3M is an ideal choice for a variety of DC power applications, including on/off inrush current fee regulating, battery charging, solar powered applications, and more. This diode is also suitable for DC to DC converters, automotive applications, and AC synchronous rectification. It is also often used as a blocking diode in safety circuits and can even be used in reverse current blocking.

Working Principle

The 1SS416L3M is a three-level MOSFET rectifier, meaning it utilizes two MOSFETs in series instead of just one. The two MOSFETs are connected in series, with a diode connected in parallel. This provides the diode with a difference in forward current during initial turn-on and steady-state. This setup also allows the diode to regulate the average current through its controlled loop.

The device can be triggered using an external signal, such as a PWM signal from a microcontroller. When the signal is low, the first MOSFET is turned on and the second MOSFET is turned off. When the signal is high, the first MOSFET turns off and the second MOSFET is turned on. This creates a pulsing current, allowing the diode to regulate the average current through the loop.

The 1SS416L3M consists of two MOSFETs, each with its own gate voltage. This allows the user to adjust the operating parameters of the device, such as the operating frequency, peak current, and duty cycle. This provides the user with flexibility to meet the needs of a variety of applications.

Conclusion

The 1SS416L3M is an ideal choice for a variety of DC applications, including on/off inrush current fee regulation, battery charging, solar powered applications, and more. Its three-level MOSFET rectifier design provides the device with high current and voltage capabilities, as well as flexibility of operation through adjustable operating parameters. As such, the 1SS416L3M is an excellent choice for a variety of DC power applications.

The specific data is subject to PDF, and the above content is for reference

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