275X2-102N06A-00

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The 275X2-102N06A-00 is a FET (Field-Effect Transistor) with MOSFET (metal-oxide semiconductor field-effect transistor) characteristics in the high frequency (RF) range. The device is capable of a wide range of voltage and current levels, making it suitable for a variety of applications.

The 275X2-102N06A-00 device is a three-terminal structure, with the source, drain and gate electrodes. The device is rated to operate with a drain-source voltage of VD=2V and a drain current ID=12A. The maximum power dissipation of the device Pd=35W. The package type of the device is a TO-220 Flat-Base Power Package.

The working principle of the 275X2-102N06A-00 device is based on the principle of FETs. FETs are voltage-controlled devices that use an electric field to modulate a current flowing between the source and drain electrodes in the device. This modulated current is the result of a gate voltage applied to the gate electrode, which affects the resistance between the source and drain electrodes.

The 275X2-102N06A-00 device has a typical threshold voltage Vth=1V, which is the minimum gate voltage required to start conduction between the source and drain electrodes. The application field of the device covers RF related applications, such as amplifiers, switches, filters, and radio frequency power control.

The device is also capable of high frequency operation. The frequency range of the device is 1GHz~6GHz. This allows the device to be used in applications such as wireless communications systems, radio remote control and anti-collision systems. The high power rating also makes it suitable for use in high power RF amplifiers.

In addition, the high voltage rating of the device allows it to be used in applications involving high voltage environments. These applications include AC, DC and pulse switching, linear regulation, and current regulation.

The 275X2-102N06A-00 device is a highly reliable device, with a long life expectancy. The device is also resistant to shock and vibration, and can operate in high temperature environments. The device is also available in a variety of packages, allowing for flexibility in the design process.

The 275X2-102N06A-00 FET is an efficient, reliable and cost-effective device suitable for a wide range of applications. It can be used in RF-related applications such as amplifiers, switches, filters, and radio frequency power control. The device is also suitable for use in high power RF amplifiers and in high voltage applications such as switch, linear regulation and current regulation. The device has a long life expectancy and is resistant to shock and vibration, making it a reliable and cost-effective solution for many applications.

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