275X2-501N16A-00

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A Field Effect Transistor (FET) is an active semiconductor device with three terminals, often referred to as the source, gate, and drain. Unlike the conventional bipolar junction transistors, the FETs are voltage controlled devices, meaning they provide gain by controlling the current flow between the source and the drain terminals in accordance with a voltage applied to the gate. There is a wide range of FETs available, of which the most common are MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) and JFETs (Junction Field Effect Transistor).

The 275X2-501N16A-00 is a N-channel depletion-mode Field Effect Transistor (FET) manufactured by Sunbomicro. This FET is optimized for radio frequency (RF) applications and has a breakdown voltage of 30V. It has low on-state current and high off-state current.

The working principle of any field effect transistor, including the type in question, involves the creation of an electric field from a “gate” and a “source” which then modulates the electrons near the channel connecting the two. This causes a variable resistance which permits the transfer of current depending on the voltage difference between the two. The current then passes through the channel, which is nothing more than a thermal connection between the “source” and “drain.”

For the 275X2-501N16A-00, the current flows from the Source to the Drain when the Gate Voltage is below the threshold of the FET. The turn-on voltage and gate capacitance is specified in the datasheet. The FET has an extremely low on-state conductance and high resistance in the reverse direction. This makes it suitable for use in low value regulation circuits and other applications requiring high input impedance, such as RF. The FET is also capable of withstanding large motor inrush currents in temperatures over 175˚C.

In general, 275X2-501N16A-00 Field Effect Transistor is very suitable for RF application as it has low on-state current, high off-state current, low on-state conductance, and high resistance. This makes it ideal for use in regulation circuits, as well as many other high input impedance applications.

The specific data is subject to PDF, and the above content is for reference