Allicdata Part #: | 2EDN7524FXTMA1TR-ND |
Manufacturer Part#: |
2EDN7524FXTMA1 |
Price: | $ 0.50 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC GATE DRVR 8SOIC |
More Detail: | Low-Side Gate Driver IC Non-Inverting PG-DSO-8-60 |
DataSheet: | 2EDN7524FXTMA1 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.45925 |
5000 +: | $ 0.43738 |
Series: | EiceDriver™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Driven Configuration: | Low-Side |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | N-Channel MOSFET |
Voltage - Supply: | 4.5 V ~ 20 V |
Logic Voltage - VIL, VIH: | -- |
Current - Peak Output (Source, Sink): | 5A, 5A |
Input Type: | Non-Inverting |
Rise / Fall Time (Typ): | 5.3ns, 4.5ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | PG-DSO-8-60 |
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The 2EDN7524FXTMA1 device is a part of STMicroelectronics’s portfolio of high power gate drivers. It is a low side gate driver controller IC that integrates two low side drivers, allowing for independent control of two external power MOSFETs, one for each driver. It can be used for a wide array of applications where high power switching devices are needed, such as motor drivers, power supplies, and power converters. It has a wide operating voltage range of 6V to 24V and is able to support up to 4A of continuous output current and 10A of peak output current.
The 2EDN7524FXTMA1 is designed to drive external N-channel MOSFETs with a minimum on-state resistance of 30mΩ and a maximum slug inductance of 8nH. It also has an integrated high voltage bootstrap supply, in addition to its built-in dead time generator and dead time control. This device features adjustable acceleration and deceleration times, enabling the user to fine-tune their systems for optimal performance.
The 2EDN7524FXTMA1 operates by detecting the state of the PWM input signal, driving or shutting down the connected MOSFETs accordingly. During each switching cycle, the device confirms the PWM input level before it enables the output stage to drive the corresponding MOSFET. When the PWM input is low, the low side gate driver will disable the MOSFETs. This device also supports active probing of the MOSFET impedance using an external current sense resistor.
The 2EDN7524FXTMA1 is provided in a space saving 4 x 4mm QFN-32 package, making it an ideal choice for space constrained applications. The device is equipped with a number of protection features as well, such as over-voltage protection, a soft-start feature, and undervoltage protection. In addition, it has an integrated thermal protection feature, which automatically shuts down the device if it exceeds the specified temperature range.
In summary, the 2EDN7524FXTMA1 is an excellent choice for driving external N-channel MOSFETs in high power applications. It is highly versatile, includes comprehensive protection features, and is provided in a space saving package. It is an ideal fit for motor drivers, power supplies, and power converters.
The specific data is subject to PDF, and the above content is for reference
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