2EDN7524GXTMA1 Integrated Circuits (ICs)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMIC - Gate Drivers

The 2EDN7524GXTMA1 is a automotive grade, high-temperature gate driver from ON Semiconductor. It is packaged in a motor-friendly, thermally enhanced 28-pin TSSOP package. The device has an operating temperature range of -40 to +125 degrees Celsius, making it an ideal choice for applications that require operating temperature ranges with automotive qualification requirements.

The 2EDN7524GXTMA1 is a high-performance gate driver designed to provide a low-capacitance, high switching frequency and high-voltage capability for modern multi MOSFET and Motor Control applications. It is designed to drive the gates of power MOSFETs and IGBTs. The 2EDN7524GXTMA1 features a wide operating voltage range of 5.5V to 46V, and its wide temperature range of -40°C to +125°C makes it an ideal choice for automotive, industrial and consumer applications.

In automotive applications, the 2EDN7524GXTMA1 is typically used to drive power transistors in a variety of applications including engine control or body control modules. It is also used in applications such as LED lighting, power inverters, and On/Off switches. In industrial applications, the 2EDN7524GXTMA1 is typically used in applications such as motor drives, DC/DC converters, and HVAC control.

Working Principle

The 2EDN7524GXTMA1 gate driver is designed to provide improved power efficiency and performance for high-efficiency applications. The driver is comprised of two independent stages, the high side stage and the low side stage. The high side stage is a high-current gate driver that provides up to 8A peak source current and 8A peak sink current, which is ideal for switching high power MOSFETs. The low side stage is a low-current gate driver that provides a maximum peak current of 2A, an ideal solution for driving smaller power FETs and IGBTs.

The 2EDN7524GXTMA1 gate driver features an on-chip bootstrap diode and a voltage regulator, which ensures the device remains operational even in high-voltage applications. The chip also features an internal pull-down resistor and a current limit circuit to improve system safety and durability. Additionally, the 2EDN7524GXTMA1 is protected against electrostatic discharge (ESD), latch-up, over temperature, under-voltage and over-current.

Conclusion

The 2EDN7524GXTMA1 is a gate driver from ON Semiconductor ideal for automotive, industrial and consumer applications. The driver consists of two independent stages and provides a wide voltage range of 5.5V-46V and a wide temperature range of -40°C to +125°C. The high side stage of the 2EDN7524GXTMA1 gate driver provides up to 8A peak source current and 8A peak sink current for high power MOSFETs, while the low side stage provides a maximum peak current of 2A for driving smaller power FETs and IGBTs. The 2EDN7524GXTMA1 is also protected against ESD, latch-up, over temperature, under-voltage and over-current.

The specific data is subject to PDF, and the above content is for reference