Allicdata Part #: | 2EDN8524FXTMA1TR-ND |
Manufacturer Part#: |
2EDN8524FXTMA1 |
Price: | $ 0.50 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC GATE DRVR 8DSO |
More Detail: | Low-Side Gate Driver IC Non-Inverting PG-DSO-8 |
DataSheet: | 2EDN8524FXTMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.45925 |
5000 +: | $ 0.43738 |
Series: | EiceDriver™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Driven Configuration: | Low-Side |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | N-Channel MOSFET |
Voltage - Supply: | 4.5 V ~ 20 V |
Logic Voltage - VIL, VIH: | 1.2V, 1.9V |
Current - Peak Output (Source, Sink): | 5A, 5A |
Input Type: | Non-Inverting |
Rise / Fall Time (Typ): | 5.3ns, 4.5ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | PG-DSO-8 |
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The 2EDN8524FXTMA1 is a highly advanced power management IC (PMIC) gate driver for optimally driving the galvanically isolated MOSFETs in various power conversion applications. It has a dedicated application field and working principle, which enables efficient and precise power management. This article will discuss the application field and working principle of the 2EDN8524FXTMA1.
Application Field of 2EDN8524FXTMA1
The 2EDN8524FXTMA1 is specifically designed for driving galvanically isolated MOSFETs with up to 3.2kV of maximum working voltage. The device features low quiescent current, dead time control, over temperature protection and wide voltage compensation range, making it ideal for single-phase, two-phase and three-phase AC/DC power converters. The 2EDN8524FXTMA1 can also be used in solar inverters, DC/DC converters, switch-mode power supplies, and motor control applications.
Working Principle of 2EDN8524FXTMA1
The 2EDN8524FXTMA1 gate driver employs a dual-channel totem pole output configuration with integrated low-side gate drivers and high-side gate drivers. This configuration minimizes cross-conduction losses and maximizes threshold voltage accuracy in the system. The integrated over temperature protection and wide-temperature range operations keep the system safe from thermal damages. Additionally, the device also offers low quiescent current, which helps to minimize power losses in the system. The device also includes dead time control and short-circuit protection for enhanced system reliability and protection.
Advantages of 2EDN8524FXTMA1
The 2EDN8524FXTMA1 PMIC gate driver offers several advantages over traditional gate drivers. It offers a high-speed switching capability with a wide operating range and a low quiescent current. It also has a dedicated dead time control unit, which helps to reduce switching losses significantly. Additionally, the device also offers wide voltage compensation range with integrated over temperature protection and the ability to manage up to 3.2kV of maximum working voltage. This helps to ensure smooth and consistent drive of power Mosfets and other related components in the system.
Conclusion
The 2EDN8524FXTMA1 PMIC gate driver is a highly advanced device that is specifically designed for optimal driving of galvanically isolated MOSFETs with up to 3.2kV of maximum working voltage. The device includes a dual-channel totem pole output configuration with integrated over temperature protection, low quiescent current, wide voltage compensation range, and dead time control for improved system reliability and operation. These features enable the 2EDN8524FXTMA1 to be an efficient, reliable and precise solution for various power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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