2N4957 Allicdata Electronics
Allicdata Part #:

1086-20990-ND

Manufacturer Part#:

2N4957

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 30V 30MA TO72
More Detail: RF Transistor PNP 30V 30mA 200mW Through Hole TO-...
DataSheet: 2N4957 datasheet2N4957 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: --
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72
Description

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The 2N4957 is a high-frequency BJT (Bipolar Junction Transistor) which is commonly used for RF applications. It is widely used in high-frequency radio transmission, low-noise amplifiers, switch-mode power supplies, and other radio-frequency circuitry.The 2N4957 is a NPN transition. This type of transistor has two PN junctions that are connected in reverse polarity to each other. The base-emitter and base-collector junctions are connected in such a way that when a positive voltage is applied to the base terminal, current will flow through it and the transistor will be in the “on” state. This current will then be “cut off” when the base voltage is returned to zero. The way in which the 2N4957 works is based on the principle of electron flow. When the base voltage is applied, it enters the transistor’s base region, creating a depletion region. Electrons then flow from the emitter to the base region, and some of them move from the base to the collector region via the depletion region. The amount of current that is allowed to flow is strictly dependent on the applied voltage and the amount of electrical charge stored in the depletion region.The 2N4957 can operate over a wide range of frequencies. It is capable of transmitting radio signals in the range of 9kHz to 100MHz, which is suitable for short-distance communication applications. At its lower end of operation, it acts as a switch-mode amplifier with very low noise and excellent linearity. Furthermore, the 2N4957 offers excellent stability, high power dissipated and gain, and a low noise figure. Its excellent protection against small signals, thermal stability, and safe operation in a wide range of operating conditions makes it a suitable choice for many RF applications. It is also relatively inexpensive and reliable, making it a popular choice among hobbyists.In summary, the 2N4957 is a high-frequency BJT suitable for RF applications. It has two PN junctions connected in reverse polarity, allowing it to be switched on and off. The transistor works on the principle of electron flow, allowing current to flow through it when voltage is applied to the base. It is capable of transmitting radio signals in the range of 9kHz to 100MHz, and offers excellent stability, high power dissipated and gain, and a low noise figure.

The specific data is subject to PDF, and the above content is for reference

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