2N4918G Allicdata Electronics
Allicdata Part #:

2N4918GOS-ND

Manufacturer Part#:

2N4918G

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 1A TO225AA
More Detail: Bipolar (BJT) Transistor PNP 40V 1A 3MHz 30W Throu...
DataSheet: 2N4918G datasheet2N4918G Datasheet/PDF
Quantity: 1251
1 +: $ 0.39690
10 +: $ 0.35154
100 +: $ 0.26964
500 +: $ 0.21314
1000 +: $ 0.17051
Stock 1251Can Ship Immediately
$ 0.43
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: 2N4918
Description

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2N4918G transistors are a type of bipolar junction transistor (BJT) composed of single emission. These are also known as NPN transistors as they operate mainly as a current amplifier. 2N4918G transistors are typically used in general-purpose amplification, switching, amplifier circuits, amplifiers, oscillators, signal generators, low-frequency amplifiers, regulators, power supplies, and signal conditioning circuits.

The basic structure of a 2N4918G transistor consists of a source, a gate, and a drain. The source connects to a negative terminal and the drain connects to a positive terminal. The gate connects to the source and the drain. The transistors control the current flowing from source to drain. When a voltage is applied to the gate, it opens allowing the current to flow through. If a higher voltage is applied to the gate, the current flow is increased. Similarly, a lower voltage applied to the gate decreases the current flow.

2N4918G transistors operate by using the following three basic principles. The first principle is that the current through the transistor is controlled by the voltage between the source and the gate. This is known as the current gain of a transistor. The second principle is that the voltage between the drain and the source is constant and is known as the avalanche breakdown voltage. The third principle is that the voltage between the gate and the source will increase as the current increases.

2N4918G transistors are found in a wide variety of electronic applications such as audio and video amplifiers, power supplies, high-speed switching circuits, switching DC motors, and phase-shift control. In addition, they are used in transistor radios and amplifiers, oscillators, signal generators, and analog-to-digital converters. These types of transistors are also used in medical and industrial applications.

The 2N4918G transistors are typically made up of silicon, germanium, or gallium arsenide and typically have a collector current of up to several hundred milliamps and a power dissipation rating of up to 150 watts. They are available in a variety of package types including through hole, surface mount, and wire bondable plastic. They are available in three popular configurations: Standard, W-Bias, and High-Bandgap. With their versatility, reasonable cost, and high performance, 2N4918G transistors are a popular choice for many applications.

BJT transistors are an important part of any circuit due to their versatility, reliability, low cost, and easy availability. 2N4918G transistors are popular in a variety of electronic applications due to their wide range of features and performance. They are often used in amplifiers, switches, power supplies, medical and industrial applications, and many other areas where reliable, cost effective solutions are needed.

The specific data is subject to PDF, and the above content is for reference

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